參數(shù)資料
型號(hào)： FS7VS-5
廠商： Mitsubishi Electric Corporation
英文描述： HIGH-SPEED SWITCHING USE
中文描述： 高速開(kāi)關(guān)使用
文件頁(yè)數(shù)： 22/91頁(yè)
文件大小： 488K
代理商： FS7VS-5
PSD935G2
PSD9XX Family
21
9.1.1.7 Programming Flash Memory
Flash memory must be erased prior to being programmed. The MCU may erase Flash
memory all at once or by-sector. Flash memory sector erases to all logic ones (FF hex),
and its bits are programmed to logic zeros. Although erasing Flash memory occurs on a
sector basis, programming Flash memory occurs on a word basis.
The PSD935G2 main Flash and secondary Flash memories require the MCU to send an
instruction to program a word or perform an erase function (see Table 8).
Once the MCU issues a Flash memory program or erase instruction, it must check for the
status of completion. The embedded algorithms that are invoked inside the PSD935G2
support several means to provide status to the MCU. Status may be checked using any of
three methods: Data Polling, Data Toggle, or the Ready/Busy output pin.
9.1.1.7.1 Data Polling
Polling on DQ7 is a method of checking whether a Program or Erase instruction is in
progress or has completed. Figure 4 shows the Data Polling algorithm.
When the MCU issues a programming instruction, the embedded algorithm within the
PSD935G2 begins. The MCU then reads the location of the word to be programmed in
Flash to check status. Data bit DQ7 of this location becomes the compliment of data
bit 7of the original data word to be programmed. The MCU continues to poll this location,
comparing DQ7 and monitoring the Error bit on DQ5. When the DQ7 matches data bit 7 of
the original data, and the Error bit at DQ5 remains
‘
0
’
, then the embedded algorithm is
complete. If the Error bit at DQ5 is
‘
1
’
, the MCU should test DQ7 again since DQ7 may
have changed simultaneously with DQ5 (see Figure 4).
The Error bit at DQ5 will be set if either an internal timeout occurred while the embedded
algorithm attempted to program the location or if the MCU attempted to program a
‘
1
’
to a
bit that was not erased (not erased is logic
‘
0
’
).
It is suggested (as with all Flash memories) to read the location again after the embedded
programming algorithm has completed to compare the word that was written to Flash with
the word that was intended to be written.
When using the Data Polling method after an erase instruction, Figure 4 still applies.
However, DQ7 will be
‘
0
’
until the erase operation is complete. A
‘
1
’
on DQ5 will indicate
a timeout failure of the erase operation, a
‘
0
’
indicates no error. The MCU can read any
location within the sector being erased to get DQ7 and DQ5.
PSDsoft generates ANSI C code functions which implement these Data Polling
algorithms.
The
PSD935G2
Functional
Blocks
(cont.)
相關(guān)PDF資料
PDF描述
PSD935F3V-15B81 Configurable Memory System on a Chip for 8-Bit Microcontrollers
PSD935F3V-15B81I Ceramic Chip Capacitors / MIL-PRF-55681; Capacitance [nom]: 30000uF; Working Voltage (Vdc)[max]: 100V; Capacitance Tolerance: +/-0.1pF; Dielectric: Multilayer Ceramic; Temperature Coefficient: C0G (NP0); Lead Style: Surface Mount Chip; Lead Dimensions: 0805; Termination: Solder Coated (Sn/Pb, 70/30); Body Dimensions: 0.080" x 0.050" x 0.055"; Container: Bag; Features: MIL-PRF-55681: S Failure Rate
PSD935F3V-15J Configurable Memory System on a Chip for 8-Bit Microcontrollers
PSD935F3V-15JI Configurable Memory System on a Chip for 8-Bit Microcontrollers
PSD935F3V-15M Configurable Memory System on a Chip for 8-Bit Microcontrollers
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