參數(shù)資料
型號(hào): ES29DS160F-12RTG
廠商: 優(yōu)先(蘇州)半導(dǎo)體有限公司
英文描述: 32Mbit(4M x 8/2M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory
中文描述: 32兆(4米× 8/2M × 16),3.0伏的CMOS只,引導(dǎo)扇區(qū)閃存
文件頁數(shù): 44/59頁
文件大小: 603K
代理商: ES29DS160F-12RTG
ESI
44
Rev. 2D Jan 5, 2006
ES29LV320D
Excel Semiconductor inc.
A
ddress
OE#
WE#
DQ0-DQ6
CE#
RY/BY#
t
RC
Figure 24. Data# Polling Timings (During Embedded Algorithms)
VA
VA
VA
t
BUSY
HIGH-Z
Valid Data
t
CH
t
ACC
t
CE
t
OH
t
DF
t
OE
t
OEH
True
Complement
Status Data
Complement
Status Data
True
Valid Data
HIGH-Z
DQ7
NOTE :
VA = Valid address. Illustration shows first status cycle after command sequence, last status read cycle, and array data read cycle
AC CHARACTERISTICS
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