參數(shù)資料
型號: ES29DS160F-12RTG
廠商: 優(yōu)先(蘇州)半導體有限公司
英文描述: 32Mbit(4M x 8/2M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory
中文描述: 32兆(4米× 8/2M × 16),3.0伏的CMOS只,引導扇區(qū)閃存
文件頁數(shù): 20/59頁
文件大?。?/td> 603K
代理商: ES29DS160F-12RTG
ESI
20
Rev. 2D Jan 5, 2006
ES29LV320D
Excel Semiconductor inc.
Table 7. Device Geometry Definition
Addresses
(Word Mode)
Addresses
(Byte Mode)
Data
Description
27h
4Eh
0016h
Device Size = 2
N
byte
28h
29h
50h
52h
0002h
0000h
Flash Device Interface description
02 = x8, x16 Asynchronous
2Ah
2Bh
54h
56h
0000h
0000h
Max. number of bytes multi-byte write = 2
N
(00h = not supported)
2Ch
58h
0002h
Number of Erase Block Regions within device
2Dh
2Eh
5Ah
5Ch
0007h
0000h
Erase Block Region 1 Information
Number of identical size erase block = 0007h+1 =8
2Fh
30h
5Eh
60h
0020h
0000h
Erase Block Region 1 Information
Number of identical size erase block = 0020h * 256byte = 8Kbyte
31h
32h
62h
64h
003Eh
0000h
Erase Block Region 2 Information
Number of identical size erase block = 003Eh+1 =63
33h
34h
66h
68h
0000h
0001h
Erase Block Region 2Information
Number of identical size erase block = 0100h * 256byte = 64Kbyte
35h
36h
6Ah
6Ch
0000h
0000h
Erase Block Region 3 Information
37h
38h
6Eh
70h
0000h
0000h
Erase Block Region 3 Information
39h
3Ah
72h
74h
0000h
0000h
Erase Block Region 4 Information
3Bh
3Ch
76h
78h
0000h
0000h
Erase Block Region 4 Information
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