參數(shù)資料
型號： ES29DS160F-12RTG
廠商： 優(yōu)先(蘇州)半導體有限公司
英文描述： 32Mbit(4M x 8/2M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory
中文描述： 32兆（4米× 8/2M × 16），3.0伏的CMOS只，引導扇區(qū)閃存
文件頁數(shù)： 12/59頁
文件大?。?/td> 603K
代理商： ES29DS160F-12RTG
ESI
12
Rev. 2D Jan 5, 2006
ES29LV320D
Excel Semiconductor inc.
Operation
CE#
OE#
WE#
RESET#
WP#/ACC
Addresses
(Note 1)
DQ0
~
DQ7
DQ8~DQ15
BYTE#
= V
IH
BYTE#
= V
IL
Read
L
L
H
H
L/H
A
IN
D
OUT
D
OUT
DQ8~DQ14 = High-Z,
DQ15 = A-1
Write
L
H
L
H
(Note 3)
A
IN
(Note 4)
(Note 4)
Accelerated Program
L
H
L
H
V
HH
A
IN
(Note 4)
(Note 4)
Standby
Vcc+
0.3V
X
X
Vcc+
0.3V
H
X
High-Z
High-Z
High-Z
Output Disable
Reset
L
H
H
H
L/H
X
High-Z
High-Z
X
X
X
L
L/H
X
High-Z
High-Z
In-system
Sector Protect
(Note 2)
L
H
L
V
ID
L/H
SA,A6=L,
A1=H,A0=L
(Note 4)
X
X
Sector Unprotect
(Note 2)
L
H
L
V
ID
L/H
(Note 3)
SA,A6=H,
A1=H,A0=L
(Note 4)
X
X
Temporary Sec-
tor Unprotect
X
X
X
V
ID
H
(Note 3)
A
IN
(Note 4)
(Note 4)
High-Z
A9 High-Volt-
age Method
Sector protect
L
V
ID
L
H
H
(Note 3)
SA,A9=V
ID
,
A6=L,
A1=H,A0=L
(Note 4)
(Note 4)
High-Z
Sector unprotect
L
V
ID
L
H
H
(Note 3)
SA,A9=V
ID
,
A6=H,
A1=H,A0=L
Table 1. ES29LV320 Device Bus Operations
Legend
:
L=Logic Low=V
IL
, H=Logic High=V
IH
, V
ID
=11.5-12.5V, V
HH
=11.5-12.5V, X=Don’t Care, SA=Sector Address,
A
IN
=Address In, D
IN
=Data In, D
OUT
=Data Out
Notes
:
1. Addresses are A20:A0 in word mode (BYTE#=V
IH
) , A20:A-1 in byte mode (BYTE#=V
IL
).
2. The sector protect and sector unprotect functions may also be implemented via programming equipment. See the “Sector/Sector
Block Protection and Unprotection” section.
3. If WP#/ACC=V
IL
, the two outermost boot sectors remain protected. If WP#/ACC=V
IH
, the two outermost boot sector protection
depends on whether they were last protected or unprotected using the method described in “Sector/Sector Block Protection and
Unprotection”. If WP#/ACC=V
HH
, all sectors will be unprotected.
4. D
IN
or D
OUT
as required by command sequence, data polling, or sector protection algorithm.
Description
CE# OE# WE#
A20
to
A12
A11
to
A10
A9
A8
to
A7
A6
A5
to
A2
A1
A0
DQ8~DQ15
DQ7~DQ0
BYTE#
= V
IH
BYTE#
= V
IL
ManufactureID:ESI
L
L
H
X
X
V
ID
X
L
X
L
L
X
X
4Ah
Device ID:
ES29LV320
L
L
H
X
X
V
ID
X
L
X
L
H
22h
X
F6(T),F9h(B)
Sector Protection
Verification
L
L
H
SA
X
V
ID
X
L
X
H
L
X
X
01h(protected)
00h(unprotected)
Security Sector
Indicator Bit(DQ7)
L
L
H
X
X
V
ID
X
L
X
H
H
X
X
99h(factory-locked),
19h(customer-lock-
able)
Legend
:
T= Top Boot Block, B = Bottom Boot Block, L=Logic Low=V
IL
, H=Logic High=V
IH
, SA=Sector Address, X = Don’t care
Table 2. Autoselect Codes (A9 High-Voltage Method)
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相關代理商/技術參數(shù)
參數(shù)描述
ES29DS160F-70RTG 制造商:EXCELSEMI 制造商全稱:EXCELSEMI 功能描述:4Mbit(512Kx 8/256K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory
ES29DS160F-70WCI 制造商:EXCELSEMI 制造商全稱:EXCELSEMI 功能描述:32Mbit(4M x 8/2M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory
ES29DS160FB-12RTG 制造商:EXCELSEMI 制造商全稱:EXCELSEMI 功能描述:8Mbit(1M x 8/512K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory
ES29DS160FB-12TG 制造商:EXCELSEMI 制造商全稱:EXCELSEMI 功能描述:16Mbit(2M x 8/1M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory
ES29DS160FB-70WCI 制造商:EXCELSEMI 制造商全稱:EXCELSEMI 功能描述:32Mbit(4M x 8/2M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory
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