參數(shù)資料
型號: ES29DS160F-12RTG
廠商: 優(yōu)先(蘇州)半導體有限公司
英文描述: 32Mbit(4M x 8/2M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory
中文描述: 32兆(4米× 8/2M × 16),3.0伏的CMOS只,引導扇區(qū)閃存
文件頁數(shù): 35/59頁
文件大?。?/td> 603K
代理商: ES29DS160F-12RTG
ESI
35
Rev. 2D Jan 5, 2006
ES29LV320D
Excel Semiconductor inc.
DC CHARACTERISTICS
Table 11. CMOS Compatible
Parameter
Symbol
Parameter Description
Test Conditions
Min
Typ
Max
Unit
I
LI
Input Load Current
V
IN
=Vss to Vcc
Vcc=Vcc max
+ 3.0
uA
I
LIT
A9 Input Load Current
Vcc=Vcc max; A9=12.5V
35
uA
I
LR
RESET# Input Load Current
Vcc=Vcc max; RESET#=12.5V
35
uA
I
LO
Output Leakage Current
Vout=Vss to Vcc,
Vcc=Vcc max
+ 1.0
uA
I
CCI
Vcc Active Read Current
(Notes 1,2)
CE#=V
IL
OE#=V
IH
, Byte
mode
5MHz
10
16
mA
1MHz
2
4
CE#=V
IL
, OE#=V
IH
, Word
mode
5MHz
10
16
1MHz
2
4
I
CC2
Vcc Active Write Current (Note 2,3)
CE#=V
IL
, OE#=V
IH
, WE#=V
IL
15
30
mA
I
CC3
Vcc Standby Current (Note 2)
CE#, RESET#= Vcc+0.3V
0.2
10
uA
I
CC4
Vcc Reset Current (Note 2)
RESET#=Vss + 0.3V
0.2
10
uA
I
CC5
Automatic Sleep Mode
(Notes2,4)
V
IH
= Vcc + 0.3V
V
IL
= Vss + 0.3V
0.2
10
uA
V
IL
Input Low Voltage
-0.5
0.8
V
V
IH
Input High Voltage
0.7xVcc
Vcc+0.3
V
V
HH
Voltage for WP#/ACC Sector
Protect/Unprotect and Program
Acceleration
Vcc = 3.0V + 10%
11.5
12.5
V
V
ID
Voltage for Autoselect and
Temporary Sector Unprotect
Vcc = 3.0V + 10%
11.5
12.5
V
V
OL
Output Low Voltage
I
OL
= 4.0 mA, Vcc = Vcc min
0.45
V
V
OH1
Output High Voltage
I
OH
= -2.0mA, Vcc = Vcc min
0.85 Vcc
V
V
OH2
I
OH
= -100 uA, Vcc = Vcc min
Vcc - 0.4
V
LKO
Low Vcc Lock-Out Voltage (Note 5)
2.3
2.5
V
Notes:
1. The Icc current listed is typically less than 2 mA/MHz, with OE# at V
IH
,
Typical condition : 25
o
C, Vcc = 3V
2. Maximum I
CC
specifications are tested with Vcc = Vcc max.
3. Icc active while Embedded Erase or Embedded Program is in progress.
4. Automatic sleep mode enables the low power mode when addresses remain stable for t
ACC
+ 30ns. Typical sleep mode current is
200 nA.
5. Not 100% tested.
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