參數(shù)資料
型號： ES29DS160F-12RTG
廠商： 優(yōu)先(蘇州)半導(dǎo)體有限公司
英文描述： 32Mbit(4M x 8/2M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory
中文描述： 32兆（4米× 8/2M × 16），3.0伏的CMOS只，引導(dǎo)扇區(qū)閃存
文件頁數(shù)： 34/59頁
文件大?。?/td> 603K
代理商： ES29DS160F-12RTG
ESI
34
Rev. 2D Jan 5, 2006
ES29LV320D
Excel Semiconductor inc.
20ns
20ns
+0.8V
Vss-0.5V
Vss-2.0V
20ns
20ns
20ns
20ns
2.0V
Vcc+0.5V
Vcc+2.0V
Negative Overshoot
Positive Overshoot
ABSOLUTE MAXIMUM RATINGS
Storage Temperature
Plastic Packages ..............................................-65
o
C to +150
o
C
Ambient Temperature
with Power Applied ...........................................-65
o
C to +125
o
C
Voltage with Respect to Ground
Vcc (Note 1) ..........................................................-0.5V to +4.0V
A9, OE#, RESET# and WP#/ACC (Note 2) ......-0.5V to +12.5V
All other pins (Note 1) ...................................-0.5V to Vcc + 0.5V
Output Short Circuit Current
(Note 3)
................. 200 mA
Notes:
1. Minimum DC voltage on input or I/O pins is -0.5V. During voltage
transitions, input or I/O pins may overshoot Vss to -2.0V for per-
iods of up to 20ns. Maximum DC voltage on input or I/O pins is
Vcc+0.5V. See Fig. 13. During voltage transition, input or I/O pins
may overshoot to Vcc+2.0V for periods up to 20ns. See Fig. 13.
2. Minimum DC input voltage on pins A9, OE#, RESET#, and WP#
/ACC is -0.5V. During voltage transitions, A9, OE#, WP#/ACC,
and RESET# may overshoot Vss to -2.0V for periods of up to
20ns. See Fig. 13. Maximum DC input voltage on pin A9 is +12.5V
which may overshoot to +14.0V for periods up to 20ns. Maximum
DC input voltage on WP#/ACC is +9.5V which may overshoot to
+12.0V for periods up to 20ns.
3. No more than one output may be shorted to ground at a time. Du-
ration of the short circuit should not be greater than one second.
Stresses above those listed under “Absolute Maximum Ratings” may
cause permanent damage to the device. This is a stress rating only;
functional operation of the device at these or any other conditions ab-
ove those indicated in the operational sections of this datasheet is
not implied. Exposure of the device to absolute maximum rating con-
ditions for extended periods may affect device reliability.
OPERATING RANGES
Industrial (I) Devices
Ambient Temperature (T
A
).................................-40
o
C to +85
o
C
Commercial Devices
Ambient Temperature (T
A
)....................................0
o
C to +70
o
C
Vcc Supply Voltages
Vcc for all devices ............................................2.7V to 3.6V
Vcc for regulated voltage range .....................3.0V to 3.6V
Operating ranges define those limits between which the functio-
nality of the device is guaranteed.
Figure 13. Maximum Overshoot Waveform
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參數(shù)描述
ES29DS160F-70RTG 制造商:EXCELSEMI 制造商全稱:EXCELSEMI 功能描述:4Mbit(512Kx 8/256K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory
ES29DS160F-70WCI 制造商:EXCELSEMI 制造商全稱:EXCELSEMI 功能描述:32Mbit(4M x 8/2M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory
ES29DS160FB-12RTG 制造商:EXCELSEMI 制造商全稱:EXCELSEMI 功能描述:8Mbit(1M x 8/512K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory
ES29DS160FB-12TG 制造商:EXCELSEMI 制造商全稱:EXCELSEMI 功能描述:16Mbit(2M x 8/1M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory
ES29DS160FB-70WCI 制造商:EXCELSEMI 制造商全稱:EXCELSEMI 功能描述:32Mbit(4M x 8/2M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory
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