參數(shù)資料
型號(hào): E28F004BX-T120
廠商: INTEL CORP
元件分類: PROM
英文描述: OSC 5V SMT PLAS 14X9 CMOS
中文描述: 512K X 8 FLASH 12V PROM, 120 ns, PDSO40
封裝: 20 X 10 MM, TSOP-40
文件頁(yè)數(shù): 39/50頁(yè)
文件大?。?/td> 449K
代理商: E28F004BX-T120
28F400BX-TB 28F004BX-TB
EXTENDED TEMPERATURE OPERATION
AC CHARACTERISTICSWE
Controlled Write Operations(1) (Continued)
Versions(4)
T28F400BX-80(9)
Unit
T28F004BX-80(9)
Symbol
Parameter
Notes
Min
Max
tWHQV3
Duration of Erase Operation
2 5
04
s
(Parameter)
tWHQV4
Duration of Erase Operation (Main)
2 5
07
s
tQVVL
tVPH
VPP Hold from Valid SRD
5 8
0
ns
tQVPH
tPHH
RP
VHH Hold from Valid SRD
6 8
0
ns
tPHBR
Boot-Block Relock Delay
7 8
100
ns
tIR
Input Rise Time
10
ns
tIF
Input Fall Time
10
ns
NOTES
1 Read timing characteristics during write and erase operations are the same as during read-only operations Refer to AC
characteristics during Read Mode
2 The on-chip WSM completely automates programerase operations programerase algorithms are now controlled inter-
nally which includes verify and margining operations
3 Refer to command definition table for valid AIN
4 Refer to command definition table for valid DIN
5 ProgramErase durations are measured to valid SRD data (successful operation SR7 e 1)
6 For Boot Block ProgramErase RP
should be held at VHH until operation completes successfully
7 Time tPHBR is required for successful relocking of the Boot Block
8 Sampled but not 100% tested
9 See Standard Test Configuration
EXTENDED TEMPERATURE OPERATION
BLOCK ERASE AND WORDBYTE WRITE PERFORMANCE
VPP e 120V g5%
Parameter
Notes
T28F400BX-80
Unit
T28F004BX-80
Min
Typ(1)
Max
BootParameter
2
15
105
s
Block Erase Time
Main Block
2
30
18
s
Erase Time
Main Block Byte
2
14
50
s
Program Time
Main Block Word
2
07
25
s
Program Time
NOTES
1 25 C
2 Excludes System-Level Overhead
44
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