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參數(shù)資料
| 型號： | E28F004BX-T120 |
| 廠商： | INTEL CORP |
| 元件分類： | PROM |
| 英文描述： | OSC 5V SMT PLAS 14X9 CMOS |
| 中文描述： | 512K X 8 FLASH 12V PROM, 120 ns, PDSO40 |
| 封裝： | 20 X 10 MM, TSOP-40 |
| 文件頁數(shù)： | 17/50頁 |
| 文件大?。?/td> | 449K |
| 代理商： | E28F004BX-T120 |
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28F400BX-TB 28F004BX-TB
During Erase Suspend mode the chip can go into a
pseudo-standby mode by taking CE
to VIH and the
active current is now a maximum of 10 mA If the
chip is enabled while in this mode by taking CE
to
VIL the Erase Resume command can be issued to
resume the erase operation
Upon completion of reads from any block other than
the block being erased the Erase Resume com-
mand must be issued When the Erase Resume
command is given the WSM will continue with the
erase sequence and complete erasing the block As
with the end of erase the status register must be
read cleared and the next instruction issued in or-
der to continue
446 EXTENDED CYCLING
Intel has designed extended cycling capability into
its ETOX III flash memory technology The 4-Mbit
boot block flash family is designed for 100000 pro-
gramerase cycles on each of the seven blocks The
combination of low electric fields clean oxide pro-
cessing and minimized oxide area per memory cell
subjected to the tunneling electric field results in
very high cycling capability
24
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| E2SDA18-16.000MTR | QUARTZ CRYSTAL RESONATOR, 16 MHz |
| E2SEA12-16.667M | QUARTZ CRYSTAL RESONATOR, 16.667 MHz |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| E28F004BXT60 | 制造商:INTEL 功能描述:* |
| E28F004BX-T60 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:4-MBIT (256K X 16, 512K X 8) BOOT BLOCK FLASH MEMORY FAMILY |
| E28F004BX-T70 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM |
| E28F004BX-T80 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:4-MBIT (256K X 16, 512K X 8) BOOT BLOCK FLASH MEMORY FAMILY |
| E28F004S3-120 | 制造商:Intel 功能描述:NOR Flash, 512K x 8, 40 Pin, Plastic, TSSOP |
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