參數(shù)資料
型號(hào): E28F004BX-T120
廠商: INTEL CORP
元件分類: PROM
英文描述: OSC 5V SMT PLAS 14X9 CMOS
中文描述: 512K X 8 FLASH 12V PROM, 120 ns, PDSO40
封裝: 20 X 10 MM, TSOP-40
文件頁數(shù): 36/50頁
文件大?。?/td> 449K
代理商: E28F004BX-T120
28F400BX-TB 28F004BX-TB
AC CHARACTERISTICSWE
Controlled Write Operations(1)
Versions
VCC g 5%
28F400BX-60(9)
Unit
28F004BX-60(9)
VCC g 10%
28F400BX-60(10) 28F400BX-80(10) 28F400BX-120(10)
28F004BX-60(10) 28F004BX-80(10) 28F004BX-120(10)
Symbol
Parameter
Notes
Min
Max
Min
Max
Min
Max
Min
Max
tAVAV
tWC Write Cycle Time
60
70
80
120
ns
tPHWL
tPS
RP
High
215
ns
Recovery to
WE
Going Low
tELWL
tCS
CE
Setup to WE
000
0
ns
Going Low
tPHHWH tPHS RP
VHH Setup to
6 8
100
ns
WE
Going High
tVPWH tVPS VPP Setup to WE
5 8
100
ns
Going High
tAVWH tAS
Address Setup to
3
50
ns
WE
Going High
tDVWH tDS
Data Setup to WE
4
505050
50
ns
Going High
tWLWH tWP WE
Pulse Width
50
60
ns
tWHDX tDH
Data Hold from
4
0
ns
WE
High
tWHAX tAH
Address Hold from
3
10
ns
WE
High
tWHEH tCH
CE
Hold from
10
ns
WE
High
tWHWL tWPH WE
Pulse
10
20
ns
Width High
tWHQV1
Duration of
2 5
6
m
s
WordByte
Programming
Operation
tWHQV2
Duration of Erase
2 5 6
03
s
Operation (Boot)
tWHQV3
Duration of Erase
2 5
03
s
Operation
(Parameter)
tWHQV4
Duration of Erase
2 5
06
s
Operation (Main)
tQVVL
tVPH VPP Hold from
5 8
0
ns
Valid SRD
41
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