- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄295865 > E28F004BX-T120 (INTEL CORP) OSC 5V SMT PLAS 14X9 CMOS PDF資料下載
參數(shù)資料
| 型號： | E28F004BX-T120 |
| 廠商： | INTEL CORP |
| 元件分類： | PROM |
| 英文描述： | OSC 5V SMT PLAS 14X9 CMOS |
| 中文描述： | 512K X 8 FLASH 12V PROM, 120 ns, PDSO40 |
| 封裝： | 20 X 10 MM, TSOP-40 |
| 文件頁數(shù)： | 28/50頁 |
| 文件大?。?/td> | 449K |
| 代理商： | E28F004BX-T120 |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁當(dāng)前第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁
28F400BX-TB 28F004BX-TB
DC CHARACTERISTICS EXTENDED TEMPERATURE OPERATION (Continued)
Symbol
Parameter
Notes
Min
Typ Max Unit
Test Conditions
VOH2
Output High Voltage (CMOS)
085 VCC
VVCC e VCC Min
IOH eb25 mA
VCC b 04
VCC e VCC Min
IOH eb100 mA
VPPL
VPP during Normal Operations
3
00
65
V
VPPH
VPP during EraseWrite Operations
7
114
120 126
V
VPPH
VPP during EraseWrite Operations
8
108
120 132
V
VLKO
VCC EraseWrite Lock Voltage
20
V
VHH
RP
Unlock Voltage
115
130
V
Boot Block WriteErase
NOTES
1 All currents are in RMS unless otherwise noted Typical values at VCC e 50V VPP e 120V T e 25 C These currents
are valid for all product versions (packages and speeds)
2 ICCES is specified with the device deselected If the device is read while in Erase Suspend Mode current draw is the sum
of ICCES and ICCR
3 Block Erases and WordByte Writes are inhibited when VPP e VPPL and not guaranteed in the range between VPPH and
VPPL
4 Sampled not 100% tested
5 Automatic Power Savings (APS) reduces ICCR to less than 1 mA typical in static operation
6 CMOS Inputs are either VCC g02V or GND g02V TTL Inputs are either VIL or VIH
7 VPP e 120V g 5% for applications requiring 100000 block erase cycles
8 VPP e 120V g 10% for applications requiring wider VPP tolerances at 100 block erase cycles
9 For the 28F004BX address pin A10 follows the COUT capacitance numbers
10 ICCR typical is 20 mA for X16 Active Read Current
CAPACITANCE(1) TA e 25 C f e 1 MHz
Symbol
Parameter
Typ
Max
Unit
Conditions
CIN
Input Capacitance
6
8
pF
VIN e 0V
COUT
Output Capacitance
10
12
pF
VOUT e 0V
NOTE
1 Sampled not 100% tested
34
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| E2SAA10-30.000MTR | QUARTZ CRYSTAL RESONATOR, 30 MHz |
| E2SDA18-13.560M | QUARTZ CRYSTAL RESONATOR, 13.56 MHz |
| E2SDA18-16.000MTR | QUARTZ CRYSTAL RESONATOR, 16 MHz |
| E2SEA12-16.667M | QUARTZ CRYSTAL RESONATOR, 16.667 MHz |
| E2SEA16-15.360M | QUARTZ CRYSTAL RESONATOR, 15.36 MHz |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| E28F004BXT60 | 制造商:INTEL 功能描述:* |
| E28F004BX-T60 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:4-MBIT (256K X 16, 512K X 8) BOOT BLOCK FLASH MEMORY FAMILY |
| E28F004BX-T70 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM |
| E28F004BX-T80 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:4-MBIT (256K X 16, 512K X 8) BOOT BLOCK FLASH MEMORY FAMILY |
| E28F004S3-120 | 制造商:Intel 功能描述:NOR Flash, 512K x 8, 40 Pin, Plastic, TSSOP |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。