參數(shù)資料
型號(hào)： E28F004BX-T120
廠商： INTEL CORP
元件分類(lèi)： PROM
英文描述： OSC 5V SMT PLAS 14X9 CMOS
中文描述： 512K X 8 FLASH 12V PROM, 120 ns, PDSO40
封裝： 20 X 10 MM, TSOP-40
文件頁(yè)數(shù)： 26/50頁(yè)
文件大?。?/td> 449K
代理商： E28F004BX-T120
28F400BX-TB 28F004BX-TB
DC CHARACTERISTICS (Continued)
Symbol
Parameter
Notes
Min
Typ Max Unit
Test Conditions
VOH1
Output High Voltage (TTL)
24
V
VCC e VCC Min
IOH eb25 mA
VOH2
Output High Voltage (CMOS)
085 VCC
VVCC e VCC Min
IOH eb25 mA
VCC b 04
VCC e VCC Min
IOH eb100 mA
VPPL
VPP during Normal Operations
3
00
65
V
VPPH
VPP during EraseWrite Operations
7
114
120 126
V
VPPH
VPP during EraseWrite Operations
8
108
120 132
V
VLKO
VCC EraseWrite Lock Voltage
20
V
VHH
RP
Unlock Voltage
115
130
V
Boot Block WriteErase
NOTES
1 All currents are in RMS unless otherwise noted Typical values at VCC e 50V VPP e 120V T e 25 C These currents
are valid for all product versions (packages and speeds)
2 ICCES is specified with the device deselected If the device is read while in Erase Suspend Mode current draw is the sum
of ICCES and ICCR
3 Block Erases and WordByte Writes are inhibited when VPP e VPPL and not guaranteed in the range between VPPH and
VPPL
4 Sampled not 100% tested
5 Automatic Power Savings (APS) reduces ICCR to less than 1 mA typical in static operation
6 CMOS Inputs are either VCC g02V or GND g02V TTL Inputs are either VIL or VIH
7 VPP e 120V g 5% for applications requiring 100000 block erase cycles
8 VPP e 120V g 10% for applications requiring wider VPP tolerances at 100 block erase cycles
9 For the 28F004BX address pin A10 follows the COUT capacitance numbers
10 ICCR typical is 20 mA for X16 Active Read Current
EXTENDED TEMPERATURE OPERATING CONDITIONS
Symbol
Parameter
Notes
Min
Max
Unit
TA
Operating Temperature
b
40
85
C
VCC
VCC Supply Voltage (10%)
5
450
550
V
DC CHARACTERISTICS EXTENDED TEMPERATURE OPERATION
Symbol
Parameter
Notes Min Typ
Max
Unit
Test Conditions
ILI
Input Load Current
1
g
10
m
AVCC e VCC Max
VIN e VCC or GND
ILO
Output Leakage Current
1
g
10
m
AVCC e VCC Max
VOUT e VCC or GND
ICCS
VCC Standby Current
1 3
15
mA
VCC e VCC Max
CE
e
RP
e
VIH RP
100
m
AVCC e VCC Max
CE
e
RP
e
VCC g02V
28F400BX
BYTE
e
VCC g02V or GND
ICCD
VCC Deep Power-Down Current
1
020
20
m
ARP
e
GND g02V
32
相關(guān)PDF資料
PDF描述
E2SAA10-30.000MTR QUARTZ CRYSTAL RESONATOR, 30 MHz
E2SDA18-13.560M QUARTZ CRYSTAL RESONATOR, 13.56 MHz
E2SDA18-16.000MTR QUARTZ CRYSTAL RESONATOR, 16 MHz
E2SEA12-16.667M QUARTZ CRYSTAL RESONATOR, 16.667 MHz
E2SEA16-15.360M QUARTZ CRYSTAL RESONATOR, 15.36 MHz
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
E28F004BXT60 制造商:INTEL 功能描述:*
E28F004BX-T60 制造商:INTEL 制造商全稱(chēng):Intel Corporation 功能描述:4-MBIT (256K X 16, 512K X 8) BOOT BLOCK FLASH MEMORY FAMILY
E28F004BX-T70 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:x8 Flash EEPROM
E28F004BX-T80 制造商:INTEL 制造商全稱(chēng):Intel Corporation 功能描述:4-MBIT (256K X 16, 512K X 8) BOOT BLOCK FLASH MEMORY FAMILY
E28F004S3-120 制造商:Intel 功能描述:NOR Flash, 512K x 8, 40 Pin, Plastic, TSSOP
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*