參數(shù)資料
型號: E28F004BX-T120
廠商: INTEL CORP
元件分類: PROM
英文描述: OSC 5V SMT PLAS 14X9 CMOS
中文描述: 512K X 8 FLASH 12V PROM, 120 ns, PDSO40
封裝: 20 X 10 MM, TSOP-40
文件頁數(shù): 20/50頁
文件大?。?/td> 449K
代理商: E28F004BX-T120
28F400BX-TB 28F004BX-TB
290451 – 10
Bus
Command
Comments
Operation
Write
Setup
Data e 20H
Erase
Address e Within block to be
erased
Write
Erase
Data e D0H
Address e Within block to be
erased
Read
Status Register Data
Toggle OE
or CE
to update
Status Register
Standby
Check SR7
1 e Ready 0 e Busy
Repeat for subsequent blocks
Full status check can be done after each block or after a
sequence of blocks
Write FFH after the last block erase operation to reset the
device to Read Array Mode
Full Status Check Procedure
290451 – 11
Bus
Command
Comments
Operation
Standby
Check SR3
1 e VPP Low Detect
Standby
Check SR45
Both 1 e Command Sequence
Error
Standby
Check SR5
1 e Block Erase Error
SR3 MUST be cleared if set during an erase attempt
before further attempts are allowed by the Write State
Machine
SR5 is only cleared by the Clear Status Register
Command in cases where multiple blocks are erased
before full status is checked
If error is detected clear the Status Register before
attempting retry or other error recovery
Figure 14 Automated Block Erase Flowchart
27
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