| 型號 | 廠商 | 描述 |
| apl501j 2 3 4 |
Advanced Power Technology Ltd. | N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| apl501p 2 3 4 |
Advanced Power Technology Ltd. | N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| apt1001r1avr 2 3 4 |
Advanced Power Technology Ltd. | LJT 43C 40#20 4#16 2#8(COAX) |
| apt1001r1bn 2 3 4 |
Advanced Power Technology Ltd. | Circular Connector; No. of Contacts:56; Series:MS27656; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:25; Circular Contact Gender:Socket; Circular Shell Style:Wall Mount Receptacle RoHS Compliant: No |
| apt1001r1bvfr 2 3 4 |
Advanced Power Technology Ltd. | 30V N-Channel PowerTrench MOSFET |
| apt1001r1hvr 2 3 4 |
Advanced Power Technology Ltd. | LJT 43C 40#20 4#16 2#8(COAX) |
| apt1001 2 |
Advanced Power Technology Ltd. | Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs |
| apt1001rblc 2 |
Advanced Power Technology Ltd. | Circular Connector; No. of Contacts:56; Series:MS27656; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:25; Circular Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-4 RoHS Compliant: No |
| apt1001rbn 2 |
Advanced Power Technology Ltd. | LJT 56C 48#20 8#16 PIN RECP |
| apt1001rbvr 2 |
Advanced Power Technology Ltd. | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| apt1001rslc 2 |
Advanced Power Technology Ltd. | Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs |
| apt1001rsvr 2 |
Advanced Power Technology Ltd. | Circular Connector; No. of Contacts:56; Series:MS27656; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:25; Circular Contact Gender:Socket; Circular Shell Style:Wall Mount Receptacle RoHS Compliant: No |
| apt10035lfll 2 |
Advanced Power Technology Ltd. | Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. |
| apt10035jll 2 |
Advanced Power Technology Ltd. | Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. |
| apt10035lll 2 |
Advanced Power Technology Ltd. | Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. |
| apt10035b2fll 2 |
Advanced Power Technology Ltd. | Circular Connector; No. of Contacts:19; Series:MS27656; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:25; Circular Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-19 RoHS Compliant: No |
| apt10035b2ll 2 |
Advanced Power Technology Ltd. | LED Lamp; Color:Red/Red; Leaded Process Compatible:Yes |
| apt10035jfll 2 |
Advanced Power Technology Ltd. | Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. |
| apt1003rkll 2 3 4 5 |
Advanced Power Technology Ltd. | POWER MOS 7 MOSFET |
| apt1003rbll 2 3 4 5 |
Advanced Power Technology Ltd. | POWER MOS 7 MOSFET |
| apt1003rsll 2 3 4 5 |
Advanced Power Technology Ltd. | POWER MOS 7 MOSFET |
| apt10040b2vr 2 |
Advanced Power Technology Ltd. | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs |
| apt10040lvr 2 |
Advanced Power Technology Ltd. | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs |
| apt10040lvfr 2 |
Advanced Power Technology Ltd. | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| apt10040b2vfr 2 |
Advanced Power Technology Ltd. | RELAY SSR SPST 280VAC 10A DIN MT |
| apt10043jvr 2 3 4 |
Advanced Power Technology Ltd. | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| apt10043 2 3 4 |
Advanced Power Technology Ltd. | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| apt10045b2fll 2 |
Advanced Power Technology Ltd. | Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. |
| apt10045b2ll 2 |
Advanced Power Technology Ltd. | Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. |
| apt10045jfll 2 |
Advanced Power Technology Ltd. | Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. |
| apt10045lfll 2 |
Advanced Power Technology Ltd. | MGrid IDT Rec W/SglLRmp .76AuLF 10Ckt |
| apt10045jll 2 |
Advanced Power Technology Ltd. | Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. |
| apt10090bfll 2 |
Advanced Power Technology Ltd. | Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. |
| apt10045lll 2 |
Advanced Power Technology Ltd. | Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. |
| apt10090bll 2 |
Advanced Power Technology Ltd. | Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. |
| apt10090sll 2 |
Advanced Power Technology Ltd. | Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. |
| apt10090sfll 2 |
Advanced Power Technology Ltd. | Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. |
| apt1004rgn 2 3 4 |
Advanced Power Technology Ltd. | N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| apt1004 2 3 4 |
Advanced Power Technology Ltd. | RES 3K00 1% 0.063W 0603 |
| apt1004rcn 2 3 4 |
Advanced Power Technology Ltd. | N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| apt1004rbn 2 3 4 |
Advanced Power Technology Ltd. | Circular Connector; No. of Contacts:16; Series:; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:20; Circular Contact Gender:Socket; Circular Shell Style:Box Mount Receptacle; Insert Arrangement:20-16 |
| apt1004rkn 2 3 4 |
Advanced Power Technology Ltd. | N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| apt10050b2vfr 2 3 4 |
Advanced Power Technology Ltd. | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| apt10050b2lc 2 3 4 |
Advanced Power Technology Ltd. | Power MOS VITM is a new generation of low gate charge, high voltage |
| apt10050jlc 2 |
Advanced Power Technology Ltd. | Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. |
| apt10050lvfr 2 |
Advanced Power Technology Ltd. | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| apt10050jvfr 2 |
Advanced Power Technology Ltd. | Aluminum Electrolytic Radial Leaded Low Profile Capacitor; Capacitance: 100uF; Voltage: 35V; Case Size: 8x9 mm; Packaging: Bulk |
| apt10050jn 2 |
Advanced Power Technology Ltd. | N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| apt10050jvr 2 |
Advanced Power Technology Ltd. | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| apt10050llc 2 |
Advanced Power Technology Ltd. | Power MOS VITM is a new generation of low gate charge, high voltage |