參數(shù)資料
型號： APT1004RKN
廠商： Advanced Power Technology Ltd.
英文描述： N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
中文描述： N溝道增強(qiáng)型高壓功率MOSFET
文件頁數(shù)： 3/4頁
文件大?。?/td> 50K
代理商： APT1004RKN
V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS
V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS
I
D
, DRAIN CURRENT (AMPERES)
FIGURE 5, R
DS
(ON) vs DRAIN CURRENT
T
, CASE TEMPERATURE (
°
C)
T
, JUNCTION TEMPERATURE (
°
C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
R
D
(
-50
-25
0
25
50
T
, JUNCTION TEMPERATURE (
°
C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
T
, CASE TEMPERATURE (
°
C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
I
D
,
I
D
,
I
D
,
(
V
G
(
B
D
,
R
D
(
I
D
,
(
V
0
100
200
300
400
500
0
4
8
12
16
20
0
2
4
6
8
0
2
4
6
8
10
12
25
50
75
100
125
150
-50
-25
0
25
50
75
100
125 150
75
100
125 150
-50
-25
0
25
50
75
100
125
150
APT1004RGN
I
D
= 0.5 I
D
[Cont.]
V
GS
= 10V
5
4
3
2
1
0
20
15
10
5
0
4
3
2
1
0
2.5
2.0
1.5
1.0
0.5
0.0
8
6
4
2
0
2.5
2.0
1.5
1.0
0.5
0.0
1.2
1.1
1.0
0.9
0.8
0.7
1.4
1.2
1.0
0.8
0.6
0.4
0
5V
4.5V
5.5V
4V
5V
4.5V
4V
VGS=10V
VGS=20V
VGS=10V
6V
VGS=5.5V,6V &10V
TJ = -55
°
C
TJ = +25
°
C
TJ = +125
°
C
VD230
μ
SEC. PULSE TEST
TJ = +125
°
C
TJ = +25
°
C
TJ = -55
°
C
NORMALIZED TO
V
GS
= 10V @ 0.5 I
D
[Cont.]
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