參數(shù)資料
型號： APT1004RKN
廠商： Advanced Power Technology Ltd.
英文描述： N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
中文描述： N溝道增強型高壓功率MOSFET
文件頁數(shù)： 4/4頁
文件大?。?/td> 50K
代理商： APT1004RKN
V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
Q
g
, TOTAL GATE CHARGE (nC)
V
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
V
G
,
I
D
,
I
D
,
C
10.67 (.420)
10.41 (.410)
5.33 (.210)
5.20 (.205)
19.05 (.750)
12.07 (.500)
10.92 (.430)
10.41 (.410)
.889 (.035) Dia. 3-Plcs.
.635 (.025)
2.54 (.100) BSC
5.08 (.200)
4.83 (.190)
3.05 (.120) BSC
1.14 (.045)
0.89 (.035)
3.81 (.150) Dia.
3.56 (.140)
Drain
Source
Gate
Dimensions in Millimeters and (Inches)
16.89 (.665)
16.38 (.645)
13.64 (.537)
13.38 (.527)
TO-257AA Package Outline
APT1004RGN
10
μ
S
100
μ
S
1mS
10mS
100mS
DC
10,000
1,000
100
10
100
50
20
10
5
2
1
1
5
10
50 100
5001000
0
10
20
30
40
50
0
20
40
60
80
100
0
0.5
1.0
1.5
2.0
0
15
10
5
1
0.5
0.1
20
16
12
8
4
0
I
D
= I
D
[Cont.]
TJ =+150
°
C
TJ =+25
°
C
VDS=500V
VDS=200V
VDS=100V
Crss
Ciss
Coss
TC =+25
°
C
TJ =+150
°
C
SINGLE PULSE
OPERATION HERE
LIMITED BY R
DS
(ON)
相關(guān)PDF資料
PDF描述
APT10050B2VFR Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
APT10050B2LC Power MOS VITM is a new generation of low gate charge, high voltage
APT10050JLC Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.
APT10050LVFR Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
APT10050JVFR Aluminum Electrolytic Radial Leaded Low Profile Capacitor; Capacitance: 100uF; Voltage: 35V; Case Size: 8x9 mm; Packaging: Bulk
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
APT10050B2LC 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS VITM is a new generation of low gate charge, high voltage
APT10050B2VFR 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
APT10050B2VFR_04 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
APT10050B2VFRG 功能描述:MOSFET N-CH 1000V 21A T-MAX RoHS:是 類別:分離式半導體產(chǎn)品 >> FET - 單 系列:POWER MOS V® 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設(shè)備封裝:TO-220FP 包裝:管件
APT10050B2VR 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
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