參數(shù)資料
型號： APT10050JVFR
廠商： Advanced Power Technology Ltd.
英文描述： Aluminum Electrolytic Radial Leaded Low Profile Capacitor; Capacitance: 100uF; Voltage: 35V; Case Size: 8x9 mm; Packaging: Bulk
中文描述： 電源MOS V是一個高電壓N新一代通道增強型功率MOSFET。
文件頁數(shù)： 2/2頁
文件大?。?/td> 39K
代理商： APT10050JVFR
Diode Forward Voltage
2
GS
S
D[Cont.]
Reverse Recovery Time (I
S
= -I
D[Cont.]
, dl
S
/dt = 100A/μs)
Reverse Recovery Charge (I
S
= -I
D[Cont.]
, dl
S
/dt = 100A/μs)
INFORMATION
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
DYNAMIC CHARACTERISTICS
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
Test Conditions
V
GS
= 0V
V
DS
= 25V
f = 1 MHz
V
GS
= 10V
V
DD
= 0.5 V
DSS
I
D
= I
D[Cont.]
@ 25°C
V
GS
= 15V
V
DD
= 0.5 V
DSS
D
= I
D[Cont.]
@ 25°C
G
= 0.6
MIN
TYP
MAX
5000
600
190
170
30
95
18
13
43
8.5
UNIT
pF
nC
ns
APT10050JLC
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
0
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current
1
(Body Diode)
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
UNIT
Amps
Volts
ns
μC
MIN
TYP
MAX
19
76
1.3
960
22.0
1
Repetitive Rating: Pulse width limited by maximum junction
temperature.
2
Pulse Test: Pulse width < 380 μS, Duty Cycle < 2%
3
See MIL-STD-750 Method 3471
4
Starting T
j
=
+25°C, L = 13.85mH, R
G
=
25
,
Peak I
L
= 19A
APT Reserves the right to change, without notice, the specifications and information contained herein.
THERMAL CHARACTERISTICS
Symbol
R
θ
JC
R
θ
JA
MIN
TYP
MAX
0.28
40
UNIT
°C/W
Characteristic
Junction to Case
Junction to Ambient
APT's devices are covered by one or more of the following U.S.patents:
4,895,810
5,256,583
5,045,903
4,748,103
5,089,434
5,283,202
5,182,234
5,231,474
5,019,522
5,434,095
5,262,336
5,528,058
31.5 (1.240)
7.8 (.307)
Dimensions in Millimeters and (Inches)
30.1 (1.185)
30.3 (1.193)
38.0 (1.496)
38.2 (1.504)
14.9 (.587)
11.8 (.463)
8.9 (.350)
9.6 (.378)
Hex Nut M4
0.75 (.030)
0.85 (.033)
12.6 (.496)
12.8 (.504)
25.2 (0.992)
25.4 (1.000)
1.95 (.077)
* Emitter
Collector
Gate
*
r = 4.0 (.157)
(2 places)
4.0 (.157)
(2 places)
H=4.8 (.187)
(4 places)
3.3 (.129)
* Emitter
Source terminals are shorted
capability is equal for either
SOT-227 (ISOTOP
) Package Outline
相關(guān)PDF資料
PDF描述
APT10050JN N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
APT10050JVR Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
APT10050LLC Power MOS VITM is a new generation of low gate charge, high voltage
APT10050LVR Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
APT10057WVR Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
APT10050JVFR_04 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
APT10050JVR 功能描述:MOSFET N-CH 1000V 19A SOT-227 RoHS:是 類別:半導體模塊 >> FET 系列:POWER MOS V® 標準包裝:10 系列:*
APT10050LLC 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS VITM is a new generation of low gate charge, high voltage
APT10050LVFR 制造商:Microsemi Corporation 功能描述:Trans MOSFET N-CH 1KV 21A 3-Pin(3+Tab) TO-264
APT10050LVFRG 功能描述:MOSFET N-CH 1000V 21A TO-264 RoHS:是 類別:分離式半導體產(chǎn)品 >> FET - 單 系列:POWER MOS V® 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
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