參數(shù)資料
型號： APT1004RGN
廠商： Advanced Power Technology Ltd.
英文描述： N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
中文描述： ? -通道增強型高壓功率MOSFET
文件頁數(shù)： 3/4頁
文件大?。?/td> 50K
代理商： APT1004RGN
V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS
V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS
I
D
, DRAIN CURRENT (AMPERES)
FIGURE 5, R
DS
(ON) vs DRAIN CURRENT
T
, CASE TEMPERATURE (
°
C)
T
, JUNCTION TEMPERATURE (
°
C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
R
D
(
-50
-25
0
25
50
T
, JUNCTION TEMPERATURE (
°
C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
T
, CASE TEMPERATURE (
°
C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
I
D
,
I
D
,
I
D
,
(
V
G
(
B
D
,
R
D
(
I
D
,
(
V
0
100
200
300
400
500
0
4
8
12
16
20
0
2
4
6
8
0
2
4
6
8
10
12
25
50
75
100
125
150
-50
-25
0
25
50
75
100
125 150
75
100
125 150
-50
-25
0
25
50
75
100
125
150
APT1004RGN
I
D
= 0.5 I
D
[Cont.]
V
GS
= 10V
5
4
3
2
1
0
20
15
10
5
0
4
3
2
1
0
2.5
2.0
1.5
1.0
0.5
0.0
8
6
4
2
0
2.5
2.0
1.5
1.0
0.5
0.0
1.2
1.1
1.0
0.9
0.8
0.7
1.4
1.2
1.0
0.8
0.6
0.4
0
5V
4.5V
5.5V
4V
5V
4.5V
4V
VGS=10V
VGS=20V
VGS=10V
6V
VGS=5.5V,6V &10V
TJ = -55
°
C
TJ = +25
°
C
TJ = +125
°
C
VD230
μ
SEC. PULSE TEST
TJ = +125
°
C
TJ = +25
°
C
TJ = -55
°
C
NORMALIZED TO
V
GS
= 10V @ 0.5 I
D
[Cont.]
相關PDF資料
PDF描述
APT1004 RES 3K00 1% 0.063W 0603
APT1004RCN N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
APT1004RBN Circular Connector; No. of Contacts:16; Series:; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:20; Circular Contact Gender:Socket; Circular Shell Style:Box Mount Receptacle; Insert Arrangement:20-16
APT1004RKN N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
APT10050B2VFR Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
相關代理商/技術參數(shù)
參數(shù)描述
APT1004RKN 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
APT10050B2LC 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS VITM is a new generation of low gate charge, high voltage
APT10050B2VFR 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
APT10050B2VFR_04 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
APT10050B2VFRG 功能描述:MOSFET N-CH 1000V 21A T-MAX RoHS:是 類別:分離式半導體產品 >> FET - 單 系列:POWER MOS V® 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件
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