參數(shù)資料
型號： CYDD04S18V18-167BBI
廠商： CYPRESS SEMICONDUCTOR CORP
元件分類： SRAM
英文描述： 128K X 36 DUAL-PORT SRAM, 9 ns, PBGA256
封裝： 17 X 17 MM, 1 MM PITCH, MO-192, FBGA-256
文件頁數(shù)： 41/53頁
文件大小： 2422K
代理商： CYDD04S18V18-167BBI
FullFlex
Document #: 38-06072 Rev. *I
Page 46 of 53
512K × 36 × 2 (18 Mbit) 1.8V/1.5V Synchronous CYDD18S36V18 Dual-Port SRAM (DDR only I/O)
Speed
(MHz)
Ordering Code
Package
Name
Package Type
Operating
Range
200
CYDD18S36V18-200BBXC
BW256C 256-ball Grid Array 19 mm x 19 mm with 1.0 mm pitch (Lead-Free) Commercial
CYDD18S36V18-200BBC
BB256C
256-ball Grid Array 19 mm x 19 mm with 1.0 mm pitch (Leaded) Commercial
167
CYDD18S36V18-167BBXC
BW256C 256-ball Grid Array 19 mm x 19 mm with 1.0 mm pitch (Lead-Free) Commercial
CYDD18S36V18-167BBC
BB256C
256-ball Grid Array 19 mm x 19 mm with 1.0 mm pitch (Leaded) Commercial
CYDD18S36V18-167BBXI
BW256C 256-ball Grid Array 19 mm x 19 mm with 1.0 mm pitch (Lead-Free) Industrial
CYDD18S36V18-167BBI
BB256C
256-ball Grid Array 19 mm x 19 mm with 1.0 mm pitch (Leaded) Industrial
256K × 36 × 2 (9 Mbit) 1.8V/1.5V Synchronous CYDD09S36V18 Dual-Port SRAM (DDR only I/O)
Speed
(MHz)
Ordering Code
Package
Name
Package Type
Operating
Range
200
CYDD09S36V18-200BBXC
BW256E 256-ball Grid Array 17 mm x 17 mm with 1.0 mm pitch (Lead-Free) Commercial
CYDD09S36V18-200BBC
BB256E
256-ball Grid Array 17 mm x 17 mm with 1.0 mm pitch (Leaded) Commercial
167
CYDD09S36V18-167BBXC
BW256E 256-ball Grid Array 17 mm x 17 mm with 1.0 mm pitch (Lead-Free) Commercial
CYDD09S36V18-167BBC
BB256E
256-ball Grid Array 17 mm x 17 mm with 1.0 mm pitch (Leaded) Commercial
CYDD09S36V18-167BBXI
BW256E 256-ball Grid Array 17 mm x 17 mm with 1.0 mm pitch (Lead-Free) Industrial
CYDD09S36V18-167BBI
BB256E
256-ball Grid Array 17 mm x 17 mm with 1.0 mm pitch (Leaded) Industrial
128K × 36 × 2 (4 Mbit) 1.8V/1.5V Synchronous CYDD04S36V18 Dual-Port SRAM (DDR only I/O)
Speed
(MHz)
Ordering Code
Package
Name
Package Type
Operating
Range
200
CYDD04S36V18-200BBXC
BW256E 256-ball Grid Array 17 mm x 17 mm with 1.0 mm pitch (Lead-Free) Commercial
CYDD04S36V18-200BBC
BB256E
256-ball Grid Array 17 mm x 17 mm with 1.0 mm pitch (Leaded) Commercial
167
CYDD04S36V18-167BBXC
BW256E 256-ball Grid Array 17 mm x 17 mm with 1.0 mm pitch (Lead-Free) Commercial
CYDD04S36V18-167BBC
BB256E
256-ball Grid Array 17 mm x 17 mm with 1.0 mm pitch (Leaded) Commercial
CYDD04S36V18-167BBXI
BW256E 256-ball Grid Array 17 mm x 17 mm with 1.0 mm pitch (Lead-Free) Industrial
CYDD04S36V18-167BBI
BB256E
256-ball Grid Array 17 mm x 17 mm with 1.0 mm pitch (Leaded) Industrial
2048K × 18 × 2 (36 Mbit) 1.8V/1.5V Synchronous CYDD36S18V18 Dual-Port SRAM (DDR only I/O)
Speed
(MHz)
Ordering Code
Package
Name
Package Type
Operating
Range
167
CYDD36S18V18-167BGXC
BY484S
484-ball Grid Array 27 mm x 27 mm with 1.0 mm pitch (Lead-Free) Commercial
CYDD36S18V18-167BGC
BG484S
484-ball Grid Array 27 mm x 27 mm with 1.0 mm pitch (Leaded) Commercial
133
CYDD36S18V18-133BGXC
BY484S
484-ball Grid Array 27 mm x 27 mm with 1.0 mm pitch (Lead-Free) Commercial
CYDD36S18V18-133BGC
BG484S
484-ball Grid Array 27 mm x 27 mm with 1.0 mm pitch (Leaded) Commercial
CYDD36S18V18-133BGXI
BY484S
484-ball Grid Array 27 mm x 27 mm with 1.0 mm pitch (Lead-Free) Industrial
CYDD36S18V18-133BGI
BG484S
484-ball Grid Array 27 mm x 27 mm with 1.0 mm pitch (Leaded) Industrial
1024K × 18 × 2 (18 Mbit) 1.8V/1.5V Synchronous CYDD18S18V18 Dual-Port SRAM (DDR only I/O)
Speed
(MHz)
Ordering Code
Package
Name
Package Type
Operating
Range
200
CYDD18S18V18-200BBXC
BW256C 256-ball Grid Array 19 mm x 19 mm with 1.0 mm pitch (Lead-Free) Commercial
CYDD18S18V18-200BBC
BB256C
256-ball Grid Array 19 mm x 19 mm with 1.0 mm pitch (Leaded) Commercial
167
CYDD18S18V18-167BBXC
BW256C 256-ball Grid Array 19 mm x 19 mm with 1.0 mm pitch (Lead-Free) Commercial
CYDD18S18V18-167BBC
BB256C
256-ball Grid Array 19 mm x 19 mm with 1.0 mm pitch (Leaded) Commercial
CYDD18S18V18-167BBXI
BW256C 256-ball Grid Array 19 mm x 19 mm with 1.0 mm pitch (Lead-Free) Industrial
CYDD18S18V18-167BBI
BB256C
256-ball Grid Array 19 mm x 19 mm with 1.0 mm pitch (Leaded) Industrial
Ordering Information (continued)
相關(guān)PDF資料
PDF描述
CYDD09S36V18-200BBXC 128K X 72 DUAL-PORT SRAM, 7.2 ns, PBGA256
CMUI-67202AL-25 1K X 9 OTHER FIFO, 25 ns, PDSO28
CP20840CPGA299B-0C FPGA, 8400 GATES, CPGA299
CP20840PQFP160B-0C FPGA, 8400 GATES, PQFP160
CP20840PQFP208B-0C FPGA, 8400 GATES, PQFP208
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
CYDD04S18V18-167BBXC 功能描述:靜態(tài)隨機存取存儲器 4M Sync Dual Port 128Kx36 90nm DDR COM RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CYDD04S18V18-167BBXI 功能描述:靜態(tài)隨機存取存儲器 4M Sync Dual Port 128Kx36 90nm DDR IND RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CYDD04S18V18-200BBXC 功能描述:靜態(tài)隨機存取存儲器 4M Sync Dual Port 128Kx36 90nm DDR COM RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CYDD04S36V18-167BBXC 功能描述:靜態(tài)隨機存取存儲器 4M Sync Dual Port 64Kx72 90nm DDR COM RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CYDD04S36V18-167BBXI 功能描述:靜態(tài)隨機存取存儲器 4M Sync Dual Port 64Kx72 90nm DDR IND RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
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