參數資料
型號: CYDD04S18V18-167BBI
廠商: CYPRESS SEMICONDUCTOR CORP
元件分類: SRAM
英文描述: 128K X 36 DUAL-PORT SRAM, 9 ns, PBGA256
封裝: 17 X 17 MM, 1 MM PITCH, MO-192, FBGA-256
文件頁數: 11/53頁
文件大小: 2422K
代理商: CYDD04S18V18-167BBI
FullFlex
Document #: 38-06072 Rev. *I
Page 19 of 53
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature ................................ –65°C to + 150°C
Ambient Temperature with
Power Applied............................................–55°C to + 125°C
Supply Voltage to Ground Potential .............. –0.5V to + 4.1V
DC Voltage Applied to
Outputs in High-Z State.......................–0.5V to VDDIO + 0.5V
DC Input Voltage.................................–0.5V to VDDIO + 0.5V
Output Current into Outputs (LOW) ............................ 20 mA
Static Discharge Voltage ...........................................> 2200V
(JEDEC JESD8-6, JESD8-B)
Latch-up Current .....................................................> 200 mA
Operating Range
Range
Ambient Temperature
VCORE
Commercial
0°C to +70°C
1.8V
± 100 mV
1.5V
± 80 mV
Industrial
–40°C to +85°C
1.8V
± 100 mV
1.5V
± 80 mV
Power Supply Requirements
Min.
Typ.
Max.
LVTTL VDDIO
3.0V
3.3V
3.6V
2.5V LVCMOS VDDIO
2.3V
2.5V
2.7V
HSTL VDDIO
1.4V
1.5V
1.9V
1.8V LVCMOS VDDIO
1.7V
1.8V
1.9V
3.3V VTTL
3.0V
3.3V
3.6V
2.5V VTTL
2.3V
2.5V
2.7V
HSTL VREF
0.68V
0.75V
0.95V
Electrical Characteristics Over the Operating Range
Parameter
Description
Configuration
All Speed Bins[27]
Unit
Min.
Typ.
Max.
VOH
Output HIGH Voltage
(VDDIO = Min., IOH = –8 mA)
LVTTL
2.4[28]
V
(VDDIO = Min., IOH = –4 mA)
HSTL(DC)[29]
VDDIO – 0.4[28]
V
(VDDIO= Min., IOH = –4 mA)
HSTL(AC)[29]
VDDIO – 0.5[28]
V
(VDDIO = Min., IOH = –6 mA)
2.5V LVCMOS
1.7[28]
V
(VDDIO = Min., IOH = –4 mA)
1.8V LVCMOS
VDDIO – 0.45[28]
V
VOL
Output HIGH Voltage
(VDDIO = Min., IOL = 8 mA)
LVTTL
0.4[28]
V
(VDDIO = Min., IOL = 4 mA)
HSTL(DC)[29]
0.4[28]
V
(VDDIO = Min., IOL = 4 mA)
HSTL(AC)[29]
0.5[28]
V
(VDDIO = Min., IOL = 6 mA)
2.5V LVCMOS
0.7[28]
V
(VDDIO = Min., IOL = 4 mA)
1.8V LVCMOS
0.45[28]
V
VIH
Input HIGH Voltage
LVTTL
2
VDDIO + 0.3
V
HSTL(DC)[29]
VREF + 0.1
VDDIO + 0.3
V
2.5V LVCMOS
1.7
V
1.8V LVCMOS
1.26
V
VIL
Input LOW Voltage
LVTTL
–0.3
0.8
V
HSTL(DC)[29]
–0.3
VREF – 0.1
V
2.5V LVCMOS
0.7
V
1.8V LVCMOS
0.36
V
Notes:
27. LVTTL and 2.5V LVCMOS are not available for 4-Mbit, 9-Mbit, 18-Mbit devices running at 250 MHz SDR and 36-Mbit devices running at 200 MHz SDR.
28. These parameters are met with VIM disabled.
29. The (DC) specifications are measured under steady state conditions. The (AC) specifications are measured while switching at speed. AC VIH/VIL in HSTL mode
are measured with 1V/ns input edge rates
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