參數(shù)資料
型號: CY7C1916BV18
廠商: Cypress Semiconductor Corp.
英文描述: 18-Mbit DDR-II SRAM 2-Word Burst Architecture(2字Burst結(jié)構(gòu),18-Mbit DDR-II SRAM)
中文描述: 18兆位的DDR - II SRAM的2字突發(fā)架構(gòu)(2字突發(fā)結(jié)構(gòu),18 -兆位的DDR - II SRAM的)
文件頁數(shù): 23/28頁
文件大?。?/td> 469K
代理商: CY7C1916BV18
CY7C1316BV18
CY7C1916BV18
CY7C1318BV18
CY7C1320BV18
Document Number: 38-05621 Rev. *C
Page 23 of 28
t
CCQO
t
CHCQV
C/C Clock Rise to Echo
Clock Valid
Echo Clock Hold after C/C
Clock Rise
Echo Clock High to Data
Valid
Echo Clock High to Data
Invalid
Clock (C/C) Rise to High-Z
(Active to High-Z)
[26, 27]
Clock (C/C) Rise to
Low-Z
[26, 27]
0.45
0.45
0.45
0.45
0.50
ns
t
CQOH
t
CHCQX
–0.45
–0.45
–0.45
–0.45
–0.50
ns
t
CQD
t
CQHQV
0.27
0.27
0.30
0.35
0.40
ns
t
CQDOH
t
CQHQX
–0.27
–0.27
–0.30
–0.35
–0.40
ns
t
CHZ
t
CHQZ
0.45
0.45
0.45
0.45
0.50
ns
t
CLZ
t
CHQX1
–0.45
–0.45
–0.45
–0.45
–0.50
ns
DLL Timing
t
KC Var
t
KC lock
t
KC Reset
t
KC Var
t
KC lock
t
KC Reset
Clock Phase Jitter
DLL Lock Time (K, C)
K Static to DLL Reset
0.20
0.20
0.20
0.20
0.20
ns
1024
30
1024
30
1024
30
1024
30
1024
30
Cycles
ns
Notes:
26.t
, t
, are specified with a load capacitance of 5 pF as in (b) of AC Test Loads. Transition is measured
±
100 mV from steady-state voltage.
27.At any given voltage and temperature t
CHZ
is less than t
CLZ
and t
CHZ
less than t
CO
.
Switching Characteristics
Over the Operating Range
[22,23]
(continued)
Cypress
Parameter
Consortium
Parameter
Description
300 MHz
Min. Max. Min. Max. Min. Max. Min. Max. Min. Max.
278 MHz
250 MHz
200 MHz
167 MHz
Unit
相關(guān)PDF資料
PDF描述
CY7C1320BV18 18-Mbit DDR-II SRAM 2-Word Burst Architecture(2字Burst結(jié)構(gòu),18-Mbit DDR-II SRAM)
CY7C1316BV18 18-Mbit DDR-II SRAM 2-Word Burst Architecture(2字Burst結(jié)構(gòu),18-Mbit DDR-II SRAM)
CY7C1318BV18 18-Mbit DDR-II SRAM 2-Word Burst Architecture(2字Burst結(jié)構(gòu),18-Mbit DDR-II SRAM)
CY7C192 64K x 4 Static RAM with Separate I/O(帶獨立的輸入/輸出口的64K x 4靜態(tài) RAM)
CY7C194B 256 Kb (64K x 4) Static RAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
CY7C192-15VCT 制造商:Cypress Semiconductor 功能描述:
CY7C192-15VXC 功能描述:靜態(tài)隨機存取存儲器 64Kx4 SEP IO 靜態(tài)隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CY7C192-15VXCT 功能描述:靜態(tài)隨機存取存儲器 64Kx4 SEP IO 靜態(tài)隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CY7C192-25DMB 制造商:Cypress Semiconductor 功能描述:SRAM Chip Async Dual 5V 256K-Bit 64K x 4-Bit 25ns 28-Pin CDIP
CY7C192-35VC 制造商:Cypress Semiconductor 功能描述: