參數(shù)資料
型號： CY7C1916BV18
廠商： Cypress Semiconductor Corp.
英文描述： 18-Mbit DDR-II SRAM 2-Word Burst Architecture(2字Burst結(jié)構(gòu),18-Mbit DDR-II SRAM)
中文描述： 18兆位的DDR - II SRAM的2字突發(fā)架構(gòu)（2字突發(fā)結(jié)構(gòu),18 -兆位的DDR - II SRAM的）
文件頁數(shù)： 11/28頁
文件大?。?/td> 469K
代理商： CY7C1916BV18
CY7C1316BV18
CY7C1916BV18
CY7C1318BV18
CY7C1320BV18
Document Number: 38-05621 Rev. *C
Page 11 of 28
Write Cycle Descriptions
(CY7C1320BV18)
[2, 8]
BWS
0
L
BWS
1
L
BWS
2
L
BWS
2
L
K
K
Comments
L-H
–
During the Data portion of a Write sequence, all four bytes (D
[35:0]
) are
written into the device.
During the Data portion of a Write sequence, all four bytes (D
[35:0]
) are
written into the device.
During the Data portion of a Write sequence, only the lower byte (D
[8:0]
) is
written into the device. D
[35:9]
will remain unaltered.
During the Data portion of a Write sequence, only the lower byte (D
[8:0]
) is
written into the device. D
[35:9]
will remain unaltered.
During the Data portion of a Write sequence, only the byte (D
[17:9]
) is
written into the device. D
[8:0]
and D
[35:18]
will remain unaltered.
During the Data portion of a Write sequence, only the byte (D
[17:9]
) is
written into the device. D
[8:0]
and D
[35:18]
will remain unaltered.
During the Data portion of a Write sequence, only the byte (D
[26:18]
) is
written into the device. D
[17:0]
and D
[35:27]
will remain unaltered.
During the Data portion of a Write sequence, only the byte (D
[26:18]
) is
written into the device. D
[17:0]
and D
[35:27]
will remain unaltered.
During the Data portion of a Write sequence, only the byte (D
[35:27]
) is
written into the device. D
[26:0]
will remain unaltered.
During the Data portion of a Write sequence, only the byte (D
[35:27]
) is
written into the device. D
[26:0]
will remain unaltered.
No data is written into the device during this portion of a Write operation.
No data is written into the device during this portion of a Write operation.
L
L
L
L
–
L-H
L
H
H
H
L-H
–
L
H
H
H
–
L-H
H
L
H
H
L-H
–
H
L
H
H
–
L-H
H
H
L
H
L-H
–
H
H
L
H
–
L-H
H
H
H
L
L-H
H
H
H
L
–
L-H
H
H
H
H
H
H
H
H
L-H
–
–
L-H
Write Cycle Descriptions
(CY7C1916BV18)
[2, 8]
BWS
0
L
K
K
Comments
L-H
–
During the Data portion of a Write sequence
,
the single byte (D
[8:0]
) is written into the device.
During the Data portion of a Write sequence
,
the single byte (D
[8:0]
) is written into the device.
No data is written into the device during this portion of a Write operation.
No data is written into the device during this portion of a Write operation.
L
–
L-H
H
H
L-H
–
–
L-H
相關(guān)PDF資料
PDF描述
CY7C1320BV18 18-Mbit DDR-II SRAM 2-Word Burst Architecture(2字Burst結(jié)構(gòu),18-Mbit DDR-II SRAM)
CY7C1316BV18 18-Mbit DDR-II SRAM 2-Word Burst Architecture(2字Burst結(jié)構(gòu),18-Mbit DDR-II SRAM)
CY7C1318BV18 18-Mbit DDR-II SRAM 2-Word Burst Architecture(2字Burst結(jié)構(gòu),18-Mbit DDR-II SRAM)
CY7C192 64K x 4 Static RAM with Separate I/O(帶獨立的輸入/輸出口的64K x 4靜態(tài) RAM)
CY7C194B 256 Kb (64K x 4) Static RAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
CY7C192-15VCT 制造商:Cypress Semiconductor 功能描述:
CY7C192-15VXC 功能描述:靜態(tài)隨機存取存儲器 64Kx4 SEP IO 靜態(tài)隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CY7C192-15VXCT 功能描述:靜態(tài)隨機存取存儲器 64Kx4 SEP IO 靜態(tài)隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CY7C192-25DMB 制造商:Cypress Semiconductor 功能描述:SRAM Chip Async Dual 5V 256K-Bit 64K x 4-Bit 25ns 28-Pin CDIP
CY7C192-35VC 制造商:Cypress Semiconductor 功能描述:
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