參數(shù)資料
型號(hào): CY7C1392BV18-167BZC
廠商: CYPRESS SEMICONDUCTOR CORP
元件分類: DRAM
英文描述: 18-Mbit DDR-II SIO SRAM 2-Word Burst Architecture
中文描述: 2M X 8 DDR SRAM, 0.5 ns, PBGA165
封裝: 13 X 15 MM, 1.40 MM HEIGHT, MO-216, FBGA-165
文件頁數(shù): 25/27頁
文件大?。?/td> 446K
代理商: CY7C1392BV18-167BZC
CY7C1392BV18
CY7C1992BV18
CY7C1393BV18
CY7C1394BV18
Document Number: 38-05623 Rev. *C
Page 25 of 27
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CY7C1392BV18-278BZXC 51-85180 165-ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm) Lead-Free
CY7C1992BV18-278BZXC
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51-85180 165-ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm)
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51-85180 165-ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm) Lead-Free
CY7C1992BV18-278BZXI
CY7C1393BV18-278BZXI
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CY7C1392BV18-300BZC
51-85180 165-ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm)
CY7C1992BV18-300BZC
CY7C1393BV18-300BZC
CY7C1394BV18-300BZC
CY7C1392BV18-300BZXC 51-85180 165-ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm) Lead-Free
CY7C1992BV18-300BZXC
CY7C1393BV18-300BZXC
CY7C1394BV18-300BZXC
CY7C1392BV18-300BZI
51-85180 165-ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm)
CY7C1992BV18-300BZI
CY7C1393BV18-300BZI
CY7C1394BV18-300BZI
CY7C1392BV18-300BZXI
51-85180 165-ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm) Lead-Free
CY7C1992BV18-300BZXI
CY7C1393BV18-300BZXI
CY7C1394BV18-300BZXI
51-85180 165-ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm)
Industrial
51-85180 165-ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm) Lead-Free
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51-85180 165-ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm)
Commercial
Industrial
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Commercial
Industrial
Ordering Information
(continued)
Not all of the speed, package and temperature ranges are available. Please contact your local sales representative or
visit
www.cypress.com
for actual products offered.
Speed
(MHz)
Ordering Code
Diagram
Package
Package Type
Operating
Range
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相關(guān)PDF資料
PDF描述
CY7C1393BV18-300BZXC 18-Mbit DDR-II SIO SRAM 2-Word Burst Architecture
CY7C1393BV18-300BZXI 18-Mbit DDR-II SIO SRAM 2-Word Burst Architecture
CY7C1394BV18-167BZC 18-Mbit DDR-II SIO SRAM 2-Word Burst Architecture
CY7C1394BV18-167BZI 18-Mbit DDR-II SIO SRAM 2-Word Burst Architecture
CY7C1394BV18-167BZXC 18-Mbit DDR-II SIO SRAM 2-Word Burst Architecture
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
CY7C1392CV18-200BZC 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 2Mx8 1.8V DDR II SIO 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CY7C1392CV18-250BZC 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 2Mx8 1.8V DDR II SIO 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CY7C1392KV18-250BZXC 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 18Mb DDR II SIO 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CY7C1392SC 制造商:Cypress Semiconductor 功能描述:
CY7C1392SV18-250BZC 功能描述:IC SRAM 2MX8 DDRII 165-FBGA RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:- 格式 - 存儲(chǔ)器:EEPROMs - 串行 存儲(chǔ)器類型:EEPROM 存儲(chǔ)容量:4K (512 x 8) 速度:400kHz 接口:I²C,2 線串口 電源電壓:2.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC(0.173",4.40mm 寬) 供應(yīng)商設(shè)備封裝:8-MFP 包裝:帶卷 (TR)