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| 型號： | CY7C1392BV18-167BZC |
| 廠商： | CYPRESS SEMICONDUCTOR CORP |
| 元件分類： | DRAM |
| 英文描述： | 18-Mbit DDR-II SIO SRAM 2-Word Burst Architecture |
| 中文描述： | 2M X 8 DDR SRAM, 0.5 ns, PBGA165 |
| 封裝： | 13 X 15 MM, 1.40 MM HEIGHT, MO-216, FBGA-165 |
| 文件頁數(shù)： | 21/27頁 |
| 文件大?。?/td> | 446K |
| 代理商： | CY7C1392BV18-167BZC |
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CY7C1392BV18
CY7C1992BV18
CY7C1393BV18
CY7C1394BV18
Document Number: 38-05623 Rev. *C
Page 21 of 27
Switching Characteristics
Over the Operating Range
[22,23]
Cypress
Parameter
t
POWER
Consortium
Parameter
Description
300 MHz
Min. Max. Min. Max. Min. Max. Min. Max. Min. Max.
1
1
1
278 MHz
250 MHz
200 MHz
167 MHz
Unit
ms
V
DD
(Typical) to the first
Access
[24]
1
1
t
CYC
t
KHKH
K Clock and C Clock Cycle
Time
Input Clock (K/K and C/C)
HIGH
Input Clock (K/K and C/C)
LOW
K Clock Rise to K Clock
Rise and C to C Rise
(rising edge to rising edge)
K/K Clock Rise to C/C
Clock Rise (rising edge to
rising edge)
3.30
5.25
3.4
5.25
4.0
6.3
5.0
7.9
6.0
8.4
ns
t
KH
t
KHKL
1.32
–
1.4
–
1.6
–
2.0
–
2.4
–
ns
t
KL
t
KLKH
1.32
–
1.4
–
1.6
–
2.0
–
2.4
–
ns
t
KHKH
t
KHKH
1.49
–
1.6
–
1.8
–
2.2
–
2.7
–
ns
t
KHCH
t
KHCH
0.0
1.45
0.0
1.55
0.0
1.8
0.0
2.2
0.0
2.7
ns
Set-up Times
t
SA
t
AVKH
Address Set-up to K Clock
Rise
Control Set-up to K Clock
Rise (LD, R/W)
Double Data Rate Control
Set-up to Clock (K, K) Rise
(BWS
0
, BWS
1,
BWS
2
,
BWS
3
)
D
[X:0]
Set-up to Clock
(K/K) Rise
0.4
–
0.4
–
0.5
–
0.6
–
0.7
–
ns
t
SC
t
IVKH
0.4
–
0.4
–
0.5
–
0.6
–
0.7
–
ns
t
SCDDR
t
IVKH
0.3
–
0.3
–
0.35
–
0.4
–
0.5
–
ns
t
SD[25]
t
DVKH
0.3
–
0.3
–
0.35
–
0.4
–
0.5
–
ns
Hold Times
t
HA
t
KHAX
Address Hold after K Clock
Rise
Control Hold after K Clock
Rise (LD, R/W)
Double Data Rate Control
Hold after Clock (K, K)
Rise (BWS
0
, BWS
1,
BWS
2
, BWS
3
)
D
[X:0]
Hold after Clock
(K/K) Rise
0.4
–
0.4
–
0.5
–
0.6
–
0.7
–
ns
t
HC
t
KHIX
0.4
–
0.4
–
0.5
–
0.6
–
0.7
–
ns
t
HCDDR
t
KHIX
0.3
–
0.3
–
0.35
–
0.4
–
0.5
–
ns
t
HD
t
KHDX
0.3
–
0.3
–
0.35
–
0.4
–
0.5
–
ns
Output Times
t
CO
t
CHQV
C/C Clock Rise (or K/K in
single clock mode) to Data
Valid
Data Output Hold after
Output C/C Clock Rise
(Active to Active)
C/C Clock Rise to Echo
Clock Valid
–
0.45
–
0.45
–
0.45
–
0.45
–
0.50
ns
t
DOH
t
CHQX
–0.45
–
–0.45
–
–0.45
–
–0.45
–
–0.50
–
ns
t
CCQO
t
CHCQV
–
0.45
–
0.45
–
0.45
–
0.45
–
0.50
ns
Notes:
23.All devices can operate at clock frequencies as low as 119 MHz. When a part with a maximum frequency above 133 MHz is operating at a lower clock frequency,
it requires the input timings of the frequency range in which it is being operated and will output data with the output timings of that frequency range.
24.This part has a voltage regulator internally; t
POWER
is the time that the power needs to be supplied above V
DD
minimum initially before a Read or Write operation
can be initiated.
25.For D2 data signal on CY7C1992BV18 device, t
SD
is 0.5 ns for 200 MHz, 250 MHz, 278 MHz and 300 MHz frequencies.
[+] Feedback
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| CY7C1393BV18-300BZXC | 18-Mbit DDR-II SIO SRAM 2-Word Burst Architecture |
| CY7C1393BV18-300BZXI | 18-Mbit DDR-II SIO SRAM 2-Word Burst Architecture |
| CY7C1394BV18-167BZC | 18-Mbit DDR-II SIO SRAM 2-Word Burst Architecture |
| CY7C1394BV18-167BZI | 18-Mbit DDR-II SIO SRAM 2-Word Burst Architecture |
| CY7C1394BV18-167BZXC | 18-Mbit DDR-II SIO SRAM 2-Word Burst Architecture |
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