參數(shù)資料
型號: CXK77P18L80AGB-4A
元件分類: SRAM
英文描述: 512K X 18 LATE-WRITE SRAM, 3.8 ns, PBGA119
封裝: 14 X 22 MM, 1.27 MM PITCH, PLASTIC, BGA-119
文件頁數(shù): 12/25頁
文件大?。?/td> 269K
代理商: CXK77P18L80AGB-4A
SONY
CXK77P36L80AGB / CXK77P18L80AGB
Preliminary
8Mb LW R-L, rev 1.1
2 / 25
May 22, 2002
256K x 36 Pin Assignment (Top View)
Notes:
1. Pad Locations 2T and 6T are true no-connects. However, they are defined as SA address inputs in x18 LW SRAMs.
2. Pad Location 2B is a true no-connect. However, it is defined as an SA address input in 16Mb LW SRAMs.
3. Pad Location 6U must be left unconnected. It is used by Sony for internal test purposes.
4. Pad Location 3R is defined as an M1 mode pin in LW SRAMs. However, it must be tied “high” in this device.
5. Pad Location 5R is defined as an M2 mode pin in LW SRAMs. However, it must be tied “l(fā)ow” in this device.
1
2
3
4
5
6
7
A
VDDQ
SA
NC
SA
VDDQ
B
NC
(2)
SA
NC
SA
NC
C
NC
SA
VDD
SA
NC
D
DQc
VSS
ZQ
VSS
DQb
E
DQc
VSS
SS
VSS
DQb
F
VDDQ
DQc
VSS
G
VSS
DQb
VDDQ
G
DQc
SBWc
NC
SBWb
DQb
H
DQc
VSS
NC
VSS
DQb
J
VDDQ
VDD
VREF
VDD
VREF
VDD
VDDQ
K
DQd
VSS
K
VSS
DQa
L
DQd
SBWd
K
SBWa
DQa
M
VDDQ
DQd
VSS
SW
VSS
DQa
VDDQ
N
DQd
VSS
SA
VSS
DQa
P
DQd
VSS
SA
VSS
DQa
R
NC
SA
M1 (4)
VDD
M2 (5)
SA
NC
T
NC
(1)
SA
NC
(1)
ZZ
U
VDDQ
TMS
TDI
TCK
TDO
RSVD
(3)
VDDQ
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