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參數(shù)資料
| 型號： | CXK77B3641AGB |
| 廠商： | Sony Corporation |
| 英文描述： | 4Mb Late Write LVTTL High Speed Synchronous SRAMs (128K x 36Bit)(4M位、寫延遲、高速邏輯收發(fā)（HSTL）、高速同步靜態(tài)RAM (128K x 36位)) |
| 中文描述： | 4Mb的后寫入LVTTL高速（128K的x 36Bit）（4分位，寫延遲，高速邏輯收發(fā)（HSTL），高速同步靜態(tài)隨機存儲器（128K的× 36位）同步靜態(tài)存儲器） |
| 文件頁數(shù)： | 9/28頁 |
| 文件大?。?/td> | 222K |
| 代理商： | CXK77B3641AGB |
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4Mb, Sync LW, LVTTL, rev 1.2
9 / 28
September 24, 1998
SONY
CXK77B3641AGB / CXK77B1841AGB
Preliminary
Absolute Maximum Ratings
(1)
(1)
Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage
to the device. This is a stress rating only, and functional operation of the device at these or any other
conditions other than those indicated in the operational sections of this specification is not implied.
Exposure to absolute maximum rating conditions for extended periods may affect reliability.
PBGA Package Thermal Characteristics
Board size & thickness (Board A, B): 7.62W x 11.43L x 1.57T (mm)
Item
Symbol
Rating
Unit
Supply Voltage
V
DD
V
DDQ
V
IN
V
OUT
T
A
T
J
T
STG
-0.5 to +4.6
V
Output Supply Voltage
-0.5 to +4.6
V
Input Voltage
-0.5 to V
DD
+0.5 (4.6V max.)
-0.5 to V
DDQ
+0.5 (4.6V max.)
0 to 85
V
Output Voltage
V
°
C
°
C
°
C
Operating Temperature
Junction Temperature
0 to 110
Storage Temperature
-55 to 150
Sample Form
Ambient
Air
Flow
(m/s)
Thermal
Resistance
(
°
C/W)
Reference
1
θ
JA
PKG only
Room Temp
0
1
2
3
81.0
36.9
29.5
26.1
Max Thermal Resistance
2
θ
JA
PKG on Board A*
Room Temp
0
1
2
3
32.4
23.8
20.7
18.6
*Board A is a two layer printed circuit
board with very low density trace in
both layers.
3
θ
JA
PKG on Board B**
Room Temp
0
1
2
3
16.0
12.9
12.0
11.3
**Board B is a four layer printed circuit
board, same as Board A except with two
GND planes in the middle layers.
4
θ
JC
PKG only
DI Water
-
3.6
Min Thermal Resistance
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| CXK77B1841GB | 4Mb Late Write LVTTL High Speed Synchronous SRAM (256K x 18Bit)(4M位、寫延遲、LVTTL高速同步靜態(tài)RAM (256K x 18位)) |
| CXK77B3611AGB- | High Speed Bi-CMOS Synchronous Static RAM |
| CXK77B3611AGB-5 | High Speed Bi-CMOS Synchronous Static RAM |
| CXK77B3611AGB-6 | High Speed Bi-CMOS Synchronous Static RAM |
| CXK77B3611AGB | High Speed 1MBit Bi-CMOS Synchronous Static RAM(高速1M位、Bi-CMOS同步靜態(tài)RAM) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CXK77B3641GB-5 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x36 Fast Synchronous SRAM |
| CXK77B3641GB-6 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x36 Fast Synchronous SRAM |
| CXK77K18R320GB | 制造商:SONY 制造商全稱:Sony Corporation 功能描述:32Mb LW R-R HSTL High Speed Synchronous SRAM (2Mb x 18) |
| CXK77K18R320GB-3 | 制造商:SONY 制造商全稱:Sony Corporation 功能描述:32Mb LW R-R HSTL High Speed Synchronous SRAM (2Mb x 18) |
| CXK77K18R320GB-33 | 制造商:SONY 制造商全稱:Sony Corporation 功能描述:32Mb LW R-R HSTL High Speed Synchronous SRAM (2Mb x 18) |
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