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參數(shù)資料
| 型號： | CXK77B3641AGB |
| 廠商： | Sony Corporation |
| 英文描述： | 4Mb Late Write LVTTL High Speed Synchronous SRAMs (128K x 36Bit)(4M位、寫延遲、高速邏輯收發(fā)（HSTL）、高速同步靜態(tài)RAM (128K x 36位)) |
| 中文描述： | 4Mb的后寫入LVTTL高速（128K的x 36Bit）（4分位，寫延遲，高速邏輯收發(fā)（HSTL），高速同步靜態(tài)隨機存儲器（128K的× 36位）同步靜態(tài)存儲器） |
| 文件頁數(shù)： | 27/28頁 |
| 文件大?。?/td> | 222K |
| 代理商： | CXK77B3641AGB |
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4Mb, Sync LW, LVTTL, rev 1.2
27 / 28
September 24, 1998
SONY
CXK77B3641AGB / CXK77B1841AGB
Preliminary
Revision History
Rev. #
Rev. Date
Description of Modification
rev 0.0
02/10/98
Initial Version
rev 0.0
02/20/98
1. Changed DC Recommended Operating Conditions (p. 10).
2. Added x36 and x18 typical I
DD
values (p. 11).
3. Changed 2.5V V
DDQ
AC Test Conditions (p. 14).
4. Changed 3.3V V
DDQ
AC Test Conditions (p. 15).
5. Added x36 and x18 part numbers in boundary scan ID Registers
(p. 23).
rev 1.0
04/14/98
1. Modified AC Timing Characteristics
Deleted “-50” bin from all modes.
Renamed “-36” bin to “-33” bin in all modes.
Renamed “-40” bin to “-37” bin in all modes.
Renamed “-45” bin to “-4” bin in all modes.
R-R Mode:
Added “Clock Pulse Width timing parameters characterized but
not 100% tested at 1.3ns” note for -33 and -37 bins.
-33
T
KHKH
T
KHQV
, T
KHQZ
, T
GLQV
, T
GHQZ
-37
T
KHKH
T
KHKL
, T
KLKH
T
KHQV
, T
KHQZ
, T
GLQV
, T
GHQZ
-4
T
KHKH
T
KHQV
, T
KHQZ
, T
GLQV
, T
GHQZ
R-L, R-FT Modes:
Added “R-FT timing parameters guaranteed by design only”
note for all bins.
Removed T
KHQZ1
from all bins.
-33
T
KHKH
T
KHKL
, T
KLKH
KHQV
T
KLQV
, T
KHQZ
, T
GLQV
, T
GHQZ
-37
T
KHKH
T
KHKL
, T
KLKH
T
KLQV
, T
KHQZ
, T
GLQV
, T
GHQZ
-4
T
KHKH
T
KHQV
T
KLQV
, T
KHQZ
, T
GLQV
, T
GHQZ
3.6ns to 3.3ns
2.0ns to 2.3ns
4.0ns to 3.6ns
1.4ns to 1.3ns
2.1ns to 2.4ns
4.5ns to 4.0ns
2.3ns to 2.5ns
4.5ns to 5.0ns
1.3ns to 1.5ns
5.5ns to 5.0ns
2.0ns to 2.3ns
4.5ns to 5.5ns
1.4ns to 1.5ns
2.1ns to 2.4ns
5.0ns to 5.7ns
6.0ns to 5.7ns
2.3ns to 2.5ns
2. Added “3.78V V
DD
(Max) support” note to DC Recommended
Operating Conditions (p. 10).
3. Changed all maximum ambient temperature references (T
A
Max)
from 70
o
C to 85
o
C (pp. 9-15).
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| CXK77B1841GB | 4Mb Late Write LVTTL High Speed Synchronous SRAM (256K x 18Bit)(4M位、寫延遲、LVTTL高速同步靜態(tài)RAM (256K x 18位)) |
| CXK77B3611AGB- | High Speed Bi-CMOS Synchronous Static RAM |
| CXK77B3611AGB-5 | High Speed Bi-CMOS Synchronous Static RAM |
| CXK77B3611AGB-6 | High Speed Bi-CMOS Synchronous Static RAM |
| CXK77B3611AGB | High Speed 1MBit Bi-CMOS Synchronous Static RAM(高速1M位、Bi-CMOS同步靜態(tài)RAM) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CXK77B3641GB-5 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x36 Fast Synchronous SRAM |
| CXK77B3641GB-6 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x36 Fast Synchronous SRAM |
| CXK77K18R320GB | 制造商:SONY 制造商全稱:Sony Corporation 功能描述:32Mb LW R-R HSTL High Speed Synchronous SRAM (2Mb x 18) |
| CXK77K18R320GB-3 | 制造商:SONY 制造商全稱:Sony Corporation 功能描述:32Mb LW R-R HSTL High Speed Synchronous SRAM (2Mb x 18) |
| CXK77K18R320GB-33 | 制造商:SONY 制造商全稱:Sony Corporation 功能描述:32Mb LW R-R HSTL High Speed Synchronous SRAM (2Mb x 18) |
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