參數(shù)資料
型號: C67076-A2506-A17
廠商: SIEMENS AG
英文描述: IGBT Power Module (Power module 3-phase full-bridge Including fast free-wheel diodes)
中文描述: IGBT功率模塊(功率模塊3相全橋包括快速滑行二極管)
文件頁數(shù): 7/9頁
文件大小: 137K
代理商: C67076-A2506-A17
Semiconductor Group
7
Feb-10-1997
BSM 35 GD 120 D2
Typ. switching time
I = f (I
C
) , nductive load , T
j
= 125°C
par.: V
CE
= 600 V, V
GE
= ± 15 V, R
G
= 39
0
10
20
30
40
50
60
A
I
C
80
1
10
2
10
3
10
ns
t
tdon
tr
tdoff
tf
Typ. switching time
t = f (R
G
) ,inductive load ,
T
j
= 125°C
par.: V
CE
= 600 V, V
GE
= ± 15 V, I
C
= 35 A
0
20
40
60
80
100 120 140
R
G
180
1
10
2
10
3
10
ns
t
tdon
tr
tdoff
tf
Typ. switching losses
E = f (I
C
) ,
inductive load ,
T
j
= 125°C
par.: V
CE
= 600 V, V
GE
= ± 15 V, R
G
= 39
0
10
20
30
40
50
60
A
I
C
80
0
2
4
6
8
10
12
14
16
mWs
20
E
Eon
Eoff
Typ. switching losses
E = f (R
G
) , nductive load , T
j
= 125°C
par.: V
CE
= 600V, V
GE
= ± 15 V, I
C
= 35 A
0
20
40
60
80
100 120 140
R
G
180
0
2
4
6
8
10
12
14
16
mWs
20
E
Eon
Eoff
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