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參數(shù)資料
| 型號： | C67076-A2506-A17 |
| 廠商： | SIEMENS AG |
| 英文描述： | IGBT Power Module (Power module 3-phase full-bridge Including fast free-wheel diodes) |
| 中文描述： | IGBT功率模塊（功率模塊3相全橋包括快速滑行二極管） |
| 文件頁數(shù)： | 1/9頁 |
| 文件大?。?/td> | 137K |
| 代理商： | C67076-A2506-A17 |
Semiconductor Group
1
Feb-10-1997
BSM 35 GD 120 D2
IGBT Power Module
Preliminary data
Power module
3-phase full-bridge
Including fast free-wheel diodes
Package with insulated metal base plate
Type
BSM 35 GD 120 D2
V
CE
1200V 50A
I
C
Package
SIXPACK 1
Ordering Code
C67076-A2506-A17
Maximum Ratings
Parameter
Collector-emitter voltage
Symbol
V
CE
V
CGR
Values
1200
Unit
V
Collector-gate voltage
R
GE
= 20 k
Gate-emitter voltage
1200
± 20
V
GE
I
C
DC collector current
T
C
= 25 °C
T
C
= 80 °C
Pulsed collector current, t
p
= 1 ms
T
C
= 25 °C
T
C
= 80 °C
Power dissipation per IGBT
T
C
= 25 °C
Chip temperature
Storage temperature
35
50
A
I
Cpuls
70
100
P
tot
280
W
T
j
T
stg
+ 150
°C
-55 ... + 150
Thermal resistance, chip case
Diode thermal resistance, chip case
Insulation test voltage, t= 1min.
R
thJC
R
thJC
D
V
is
-
-
-
≤
0.44
≤
0.8
2500
K/W
Vac
Creepage distance
Clearance
DIN humidity category, DIN 40 040
16
11
F
mm
sec
IEC climatic category, DIN IEC 68-1
-
55 / 150 / 56
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| C67076-A2506-A67 | 制造商:EUPEC 制造商全稱:EUPEC 功能描述:IGBT Power Module |
| C67076-A2508-A67 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:IGBT Power Module (Power module 3-phase full-bridge Including fast free-wheel diodes |
| C67076-A2510-A67 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:IGBT Power Module (Power module 3-phase full-bridge Including fast free-wheel diodes) |
| C67076-A2513-A67 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Power module |
| C67076-A2514-A67 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:IGBT Power Module (Power module 3-phase full-bridge Including fast free-wheel diodes) |
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