參數(shù)資料
型號(hào): C67076-A2506-A17
廠商: SIEMENS AG
英文描述: IGBT Power Module (Power module 3-phase full-bridge Including fast free-wheel diodes)
中文描述: IGBT功率模塊(功率模塊3相全橋包括快速滑行二極管)
文件頁數(shù): 3/9頁
文件大?。?/td> 137K
代理商: C67076-A2506-A17
Semiconductor Group
3
Feb-10-1997
BSM 35 GD 120 D2
Electrical Characteristics
, at T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
Values
typ.
Unit
min.
max.
Switching Characteristics, Inductive Load at T
j
= 125 °C
Turn-on delay time
V
CC
= 600 V, V
GE
= 15 V, I
C
= 35 A
R
Gon
= 39
Rise time
t
d(on)
-
60
120
ns
V
CC
= 600 V, V
GE
= 15 V, I
C
= 35 A
R
Gon
= 39
Turn-off delay time
t
r
-
60
120
V
CC
= 600 V, V
GE
= -15 V, I
C
= 35 A
R
Goff
= 39
Fall time
t
d(off)
-
400
600
V
CC
= 600 V, V
GE
= -15 V, I
C
= 35 A
R
Goff
= 39
t
f
-
50
75
Free-Wheel Diode
Diode forward voltage
I
F
= 35 A, V
GE
= 0 V, T
j
= 25 °C
I
F
= 35 A, V
GE
= 0 V, T
j
= 125 °C
Reverse recovery time
I
F
= 35 A, V
R
= -600 V, V
GE
= 0 V
d
F
/dt= -800 A/μs, T
j
= 125 °C
Reverse recovery charge
I
F
= 35 A, V
R
= -600 V, V
GE
= 0 V
d
F
/dt= -800 A/μs
T
j
= 25 °C
T
j
= 125 °C
V
F
-
-
1.9
2.3
-
2.8
V
t
rr
-
0.25
-
μs
Q
rr
-
-
5
2
-
-
μC
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