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參數(shù)資料
| 型號： | C67076-A2508-A67 |
| 廠商： | SIEMENS AG |
| 英文描述： | IGBT Power Module (Power module 3-phase full-bridge Including fast free-wheel diodes |
| 中文描述： | IGBT功率模塊（功率模塊3相全橋包括快速滑行二極管 |
| 文件頁數(shù)： | 1/9頁 |
| 文件大?。?/td> | 122K |
| 代理商： | C67076-A2508-A67 |
Semiconductor Group
1
Jan-09-1997
BSM 10 GD 60 DN2
IGBT Power Module
Power module
3-phase full-bridge
Including fast free-wheel diodes
Package with insulated metal base plate
Type
BSM 10 GD 60 DN2
V
CE
600V
I
C
10A
Package
ECONOPACK 1
Ordering Code
C67076-A2508-A67
Maximum Ratings
Parameter
Collector-emitter voltage
Symbol
V
CE
V
CGR
Values
600
Unit
V
Collector-gate voltage
R
GE
= 20 k
Gate-emitter voltage
600
± 20
V
GE
I
C
DC collector current
T
C
= 40 °C
Pulsed collector current, t
p
= 1 ms
T
C
= 40 °C
Power dissipation per IGBT
T
C
= 25 °C
Chip temperature
Storage temperature
10
A
I
Cpuls
20
P
tot
35
W
T
j
T
stg
+ 125
°C
-55 ... + 150
Thermal resistance, chip case
Diode thermal resistance, chip case
R
thJC
R
thJC
D
V
is
-
-
≤
3.5
≤
4.5
2500
12
10
K/W
Insulation test voltage, t= 1min.
Creepage distance
Clearance
Vac
mm
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
-
-
F
sec
40 / 125 / 56
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| C67076-S1018-A2 | SIMOPAC Module (Power module Single switch N channel Enhancement mode) |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| C67076-A2510-A67 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:IGBT Power Module (Power module 3-phase full-bridge Including fast free-wheel diodes) |
| C67076-A2513-A67 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Power module |
| C67076-A2514-A67 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:IGBT Power Module (Power module 3-phase full-bridge Including fast free-wheel diodes) |
| C67076-A2515-A67 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:IGBT Power Module (Power module 3-phase full-bridge Including fast free-wheel diodes) |
| C67076-S1013-A2 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:SIMOPAC Module (Power module Single switch N channel Enhancement mode) |
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