參數(shù)資料
型號(hào): C67076-A2508-A67
廠商: SIEMENS AG
英文描述: IGBT Power Module (Power module 3-phase full-bridge Including fast free-wheel diodes
中文描述: IGBT功率模塊(功率模塊3相全橋包括快速滑行二極管
文件頁數(shù): 8/9頁
文件大小: 122K
代理商: C67076-A2508-A67
Semiconductor Group
8
Jan-09-1997
BSM 10 GD 60 DN2
Forward characteristics of fast recovery
reverse diode
I
F
= f(V
F
)
parameter: T
j
0.0
0.5
1.0
1.5
2.0
V
3.0
V
F
0
2
4
6
8
10
12
14
16
A
20
I
F
T
j
=25°C
=125°C
j
T
Transient thermal impedance Diode
Z
th JC
=
(t
p
)
parameter: D = t
p
/ T
-3
10
-5
10
-2
10
-1
10
0
10
1
10
K/W
Z
thJC
10
-4
10
-3
10
-2
10
-1
10
0
s
t
p
single pulse
0.01
0.02
0.05
0.10
0.20
D = 0.50
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