參數(shù)資料
型號(hào): C67076-A2506-A17
廠商: SIEMENS AG
英文描述: IGBT Power Module (Power module 3-phase full-bridge Including fast free-wheel diodes)
中文描述: IGBT功率模塊(功率模塊3相全橋包括快速滑行二極管)
文件頁(yè)數(shù): 6/9頁(yè)
文件大?。?/td> 137K
代理商: C67076-A2506-A17
Semiconductor Group
6
Feb-10-1997
BSM 35 GD 120 D2
Typ. gate charge
V
GE
=
(Q
Gate
)
parameter: I
C puls
= 35 A
0
40
80
120
160
nC
Q
Gate
220
0
2
4
6
8
10
12
14
16
V
20
V
GE
800 V
600 V
Typ. capacitances
C= f (V
CE
)
parameter: V
GE
= 0 V, f = 1 MHz
0
5
10
15
20
25
30
V
V
CE
40
-2
10
-1
10
0
10
1
10
nF
C
Ciss
Coss
Crss
Reverse biased safe operating area
I
Cpuls
= f(V
CE
)
,
T
j
= 150°C
parameter: V
GE
= 15 V
0
200
400
600
800
1000 1200
V
V
CE
1600
0.0
0.5
1.0
1.5
2.5
I
Cpuls
/I
C
Short circuit safe operating area
I
Csc
= f(V
CE
) , T
j
= 150°C
parameter: V
GE
= ± 15 V, t
SC
10 μs, L < 50 nH
0
200
400
600
800
1000 1200
V
V
CE
1600
0
2
4
6
8
12
I
Csc
/I
C
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