參數(shù)資料
型號(hào)： C3ENPB0-DS
英文描述： 4 Mbit (512 Kbit x 8) ZEROPOWER® SRAM
中文描述： ? - 3E的網(wǎng)絡(luò)處理器的數(shù)據(jù)資料硅修訂買0
文件頁數(shù)： 78/114頁
文件大?。?/td> 1893K
代理商： C3ENPB0-DS
78
CHAPTER 3: ELECTRICAL SPECIFICATIONS
C3ENPA1-DS/D REV 03
MOTOROLA GENERAL BUSINESS INFORMATION
θ
jc
is the junction-to-case thermal resistance
θ
int
is the adhesive or interface material thermal resistance
θ
sa
is the heat sink base-to-ambient thermal resistance
P
d
is the power dissipated by the device
During operation, the die-junction temperatures (T
j
) should be maintained less than the
value specified in
Table 36
. The temperature of the air cooling the component greatly
depends upon the ambient inlet air temperature and the air temperature rise within the
electronic cabinet. An electronic cabinet inlet-air temperature (T
a
) may range from 30
°
to
40
°
C. The air temperature rise within a cabinet (T r ) may be in the range of 5
°
to 10
°
C. The
thermal resistance of the thermal interface material (
θ
int
) is typically about 1.5
°
C/W. For
example, assuming a T
a
of 30
°
C, a T
r
of 5
°
C, a CBGA package
θ
jc
= 0.1, and a maximum
power consumption (P
d
) of 7.5 W, the following expression for T
j
is obtained:
Die-junction temperature: T
j
= 30
°
C + 5
°
C + (0.1
°
C/W + 1.5
°
C/W +
θ
sa
) x 7.5 W
For this example, a
θ
sa
value of 10.4
°
C/W or less is required to maintain the die junction
temperature below the maximum value of
Table36
.
Though the die junction-to-ambient and the heat sink-to-ambient thermal resistances are
a common figure-of-merit used for comparing the thermal performance of various
microelectronic packaging technologies, one should exercise caution when only using
this metric in determining thermal management because no single parameter can
adequately describe three-dimensional heat flow. The final die-junction operating
temperature is not only a function of the component-level thermal resistance, but the
system-level design and its operating conditions. In addition to the component's power
consumption, a number of factors affect the final operating die-junction
temperature
—
airflow, board population (local heat flux of adjacent components), heat
sink efficiency, heat sink attach, heat sink placement, next-level interconnect technology,
system air temperature rise, altitude, etc.
Due to the complexity and the many variations of system-level boundary conditions for
today's microelectronic equipment, the combined effects of the heat transfer
mechanisms (radiation, convection,and conduction) may vary widely. For these reasons,
we recommend using conjugate heat transfer models for the board, as well as
system-level designs.
F
n
.
相關(guān)PDF資料
PDF描述
C3F189AD 4 Mbit (512 Kbit x 8) ZEROPOWER® SRAM
C3GD 5V, 64Kbit (8Kbit x 8) ZEROPOWER® SRAM
C5GDS 4-BIT MAGNITUDE COMPARATOR
C5RDL 8-INPUT NAND/AND GATE
C5RDS CERAMIC CHIP/MIL-PRF-55681
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
C3F 功能描述:XLR 連接器 3 PIN FEMALE RECEPT RoHS:否 制造商:Neutrik 標(biāo)準(zhǔn):Standard XLR 產(chǎn)品類型:Connectors 型式:Female 位置/觸點(diǎn)數(shù)量:3 端接類型:Solder 安裝風(fēng)格:Cable 方向:Vertical
C3F002KBS 制造商:Hammond Power Solutions 功能描述:TRANSFORMER, DISTRIBUTION , ENCAPSULATED, 480V IN, 208Y/120V OUT, 2KVA
C3F002KDS 制造商:Hammond Power Solutions 功能描述:POTTED N3R 3PH CU 2kVA 480-240
C3F003DKS 制造商:Hammond Power Solutions 功能描述:TRANSFORMER, N3R 3PH 3KVA 240-480Y/277
C3F003KBS 制造商:Hammond Power Solutions 功能描述:TRANSFORMER, DISTRIBUTION , ENCAPSULATED, 480V IN, 208Y/120V OUT, 3KVA
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購

我的聯(lián)系方式

*
*
*