參數(shù)資料
型號(hào): C3ENPB0-DS
英文描述: 4 Mbit (512 Kbit x 8) ZEROPOWER® SRAM
中文描述: ? - 3E的網(wǎng)絡(luò)處理器的數(shù)據(jù)資料硅修訂買0
文件頁數(shù): 77/114頁
文件大小: 1893K
代理商: C3ENPB0-DS
Power and Thermal Characteristics
77
MOTOROLA GENERAL BUSINESS INFORMATION
C3ENPA1-DS/D REV 03
Figure 11
Package with Heat Sink Mounted to the Printed Circuit Board
Heat generated on the active side of the chip is conducted through the silicon, then
through the heat sink attach material (or thermal interface material), and finally to the
heat sink where it is removed by convection.
Because the silicon thermal resistance is quite small, for a first-order analysis, the
temperature drop in the silicon may be neglected. Thus, the thermal interface material
and the heat sink conduction/convective thermal resistances are the dominant terms.
Heat Sink Selection Example
For preliminary heat sink sizing, the die-junction temperature can be expressed as follows:
T
j
= T
a
+ T
r
+ (
θ
jc
+
θ
int
+
θ
sa
) x P
d
where:
T
j
is the die-junction temperature
T
a
is the inlet cabinet ambient temperature
T
r
is the air temperature rise within the computer cabinet
External Resistance
Internal Resistance
External Resistance
Radiation
Heat Sink
Printed Circuit Board (PCB)
Radiation
Convection
Thermal Interface Material
Die/Package
Die Junction
Package/Leads
Convection
F
n
.
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