參數(shù)資料
型號(hào): BXM80526B700128
廠商: INTEL CORP
元件分類(lèi): 微控制器/微處理器
英文描述: 64-BIT, 700 MHz, MICROPROCESSOR, CPGA495
封裝: MICRO, PGA2-495
文件頁(yè)數(shù): 52/74頁(yè)
文件大?。?/td> 870K
代理商: BXM80526B700128
Mobile Intel Celeron Processor (0.18) in BGA2 and Micro-PGA2 Packages
at 700MHz, 650 MHz, 600 MHz, 550 MHz, 500 MHz, 450 MHz,
Low-voltage 500 MHz, and Low-voltage 400A MHz
Datasheet
Order#-XXX
49
6.1
Thermal Diode
The mobile Celeron processor has an on-die thermal diode that can be used to monitor the die
temperature(TJ). A thermal sensor located on the motherboard, or a stand-alone measurement kit,
may monitor the die temperature of the processor for thermal management or instrumentation
purposes. Table 33 and Table 34 provide the diode interface and specifications.
Note: The reading of the thermal sensor connected to the thermal diode will not necessarily reflect
the temperature of the hottest location on the die. This is due to inaccuracies in the thermal sensor,
on-die temperature gradients between the location of the thermal diode and the hottest location on
the die, and time based variations in the die temperature measurement. Time based variations can
occur when the sampling rate of the thermal diode (by the thermal sensor) is slower than the rate at
which the TJ temperature can change.
Table 33. Thermal Diode Interface
Signal Name
Pin/Ball Number
Signal Description
THERMDA
AA15
Thermal diode anode
THERMDC
AB16
Thermal diode cathode
Table 34. Thermal Diode Specifications
Symbol
Parameter
Min
Typ
Max
Unit Notes
IFW
Forward Bias Current
5
500
A
Note 1
n
Diode Ideality Factor
1.0057 1.0080 1.0125
Notes 2, 3, 4
NOTES:
1.
Intel does not support or recommend operation of the thermal diode under reverse bias. Intel does not support or
recommend operation of the thermal diode when the processor power supplies are not within their specified tolerance
range.
2.
Characterized at 100°C.
3.
Not 100% tested. Specified by design/characterization.
4.
The ideality factor, n, represents the deviation from ideal diode behavior as exemplified by the diode equation: Where Is =
saturation current, q = electronic charge, Vd = voltage across the diode, k = Boltzmann Constant, and T = absolute
temperature (Kelvin).
=
1
q
S
FW
nkT
VD
e
I
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