參數(shù)資料
型號: BLF225
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: VHF power MOS transistor
中文描述: VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝: SOT-123A, 4 PIN
文件頁數(shù): 5/12頁
文件大?。?/td> 69K
代理商: BLF225
September 1992
5
Philips Semiconductors
Product specification
VHF power MOS transistor
BLF225
Fig.6
Drain-source on-state resistance as a
function of junction temperature, typical
values.
V
GS
= 15 V;
I
D
= 3.5 A.
handbook, halfpage
(
)
0.4
0
0.3
0.2
0.1
0
50
100
Tj (
°
C)
150
MGP123
Fig.7
Input and output capacitance as functions
of drain-source voltage, typical values.
V
GS
= 0; f = 1 MHz.
handbook, halfpage
0
4
Cos
Cis
8
VDS (V)
16
400
0
200
MEA739
12
C
(pF)
Fig.8
Feedback capacitance as a function of
drain-source voltage, typical values.
V
GS
= 0; f = 1 MHz.
handbook, halfpage
(pF)
0
10
20
30
40
50
0
4
8
VDS (V)
12
16
MRA242
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