參數(shù)資料
型號： BLF225
廠商： NXP SEMICONDUCTORS
元件分類： 功率晶體管
英文描述： VHF power MOS transistor
中文描述： VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝： SOT-123A, 4 PIN
文件頁數(shù)： 2/12頁
文件大?。?/td> 69K
代理商： BLF225
September 1992
2
Philips Semiconductors
Product specification
VHF power MOS transistor
BLF225
FEATURES
Easy power control
Good thermal stability
Withstands full load mismatch.
DESCRIPTION
Silicon N-channel enhancement
mode vertical D-MOS transistor
designed for communications
transmitter applications in the VHF
frequency range.
The transistor is encapsulated in a
4-lead, SOT123 flange envelope, with
a ceramic cap. All leads are isolated
from the flange.
PINNING - SOT123
PIN
DESCRIPTION
1
2
3
4
drain
source
gate
source
PIN CONFIGURATION
CAUTION
The device is supplied in an antistatic package. The gate-source input must
be protected against static charge during transport and handling.
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided
that the BeO disc is not damaged. All persons who handle, use or dispose of
this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to
the regulations applying at the location of the user. It must never be thrown
out with the general or domestic waste.
Fig.1 Simplified outline and symbol.
k, halfpage
1
2
3
4
MSB057
s
d
g
MBB072
QUICK REFERENCE DATA
RF performance at T
h
= 25
°
C in a common source test circuit.
MODE OF OPERATION
f
(MHz)
V
DS
(V)
P
L
(W)
G
p
(dB)
>
8.5
η
D
(%)
>
60
CW, class-B
175
12.5
30
相關(guān)PDF資料
PDF描述
BLF247B ECONOLINE: RM & RL - Single Output Rail- Industry Standard Pinout- 1kVDC & 2kVDC Isolation- High Efficiency for Low Power Applications- UL94V-0 Package Material- Toroidal Magnetics- Fully Encapsulated- Efficiency to 80%
BLF276 VHF power MOS transistor
BLF277 ECONOLINE: RM & RL - Single Output Rail- Industry Standard Pinout- 1kVDC & 2kVDC Isolation- High Efficiency for Low Power Applications- UL94V-0 Package Material- Toroidal Magnetics- Fully Encapsulated- Efficiency to 80%
BLF348 ECONOLINE: RM & RL - Single Output Rail- Industry Standard Pinout- 1kVDC & 2kVDC Isolation- High Efficiency for Low Power Applications- UL94V-0 Package Material- Toroidal Magnetics- Fully Encapsulated- Efficiency to 80%
BLF861 UHF power LDMOS transistor
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BLF2324M8LS200PJ 功能描述:RF Mosfet LDMOS (Dual), Common Source 28V 1.74A 2.3GHz ~ 2.4GHz 17.2dB 60W SOT539B 制造商:ampleon usa inc. 系列:- 包裝:帶卷（TR） 零件狀態(tài):有效 晶體管類型:LDMOS（雙），共源 頻率:2.3GHz ~ 2.4GHz 增益:17.2dB 電壓 - 測試:28V 額定電流:- 噪聲系數(shù):- 電流 - 測試:1.74A 功率 - 輸出:60W 電壓 - 額定:65V 封裝/外殼:SOT539B 供應(yīng)商器件封裝:SOT539B 標(biāo)準(zhǔn)包裝:100
BLF2324M8LS200PU 功能描述:RF Mosfet LDMOS (Dual), Common Source 28V 1.74A 2.3GHz ~ 2.4GHz 17.2dB 60W SOT539B 制造商:ampleon usa inc. 系列:- 包裝:托盤 零件狀態(tài):在售 晶體管類型:LDMOS（雙），共源 頻率:2.3GHz ~ 2.4GHz 增益:17.2dB 電壓 - 測試:28V 額定電流:- 噪聲系數(shù):- 電流 - 測試:1.74A 功率 - 輸出:60W 電壓 - 額定:65V 封裝/外殼:SOT539B 供應(yīng)商器件封裝:SOT539B 標(biāo)準(zhǔn)包裝:20
BLF242 制造商:NXP Semiconductors 功能描述:MOSFET RF SOT-123 制造商:NXP Semiconductors 功能描述:MOSFET, RF, SOT-123
BLF242,112 功能描述:射頻MOSFET電源晶體管 RF DMOS 5W HF-VHF RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
BLF242 制造商:NXP Semiconductors 功能描述:MOSFET RF SOT-123
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