參數(shù)資料
型號: AS82527
廠商: INTEL CORP
元件分類: 微控制器/微處理器
英文描述: SERIAL COMMUNICATIONS CONTROLLER CONTROLLER AREA NETWORK PROTOCOL
中文描述: 2 CHANNEL(S), LOCAL AREA NETWORK CONTROLLER, PQFP44
封裝: QFP-44
文件頁數(shù): 20/22頁
文件大小: 239K
代理商: AS82527
82527
15. Page 7, t
CLLL
decreased from 20 ns to 10 ns.
16. Page 3, RESET
Y
description addition:
Warm reset: (V
CC
remains valid while RESET
Y
is asserted), RESET
Y
must be driven to a valid
low level for 1 ms minimum.
Cold reset: (V
CC
is driven to a valid level while
RESET
Y
is asserted, RESET
Y
must be driven
low for 1 ms minimum measured from a valid
V
CC
level. No falling edge on the reset pin is
required during a cold reset event.
17. Page 2, Figure 2: Pin 7 name changed to
(WR
Y
/WRL
Y
)/(R/W
Y
) from WR
Y
/(R/W
Y
).
18. Page 4, pin description name changed to
(WR
Y
/WRL
Y
)/(R/W
Y
) from WR
Y
/(R/W
Y
)
and WR
Y
in 8-bit Intel mode and WRL
Y
in
16-bit Intel mode replaces the description WR
Y
used for Intel modes.
19. Page 5, ABSOLUTE MAXIMUM RATINGS addi-
tion: Laboratory testing shows the 82527 will
withstand up to 10 mA for injected current into
both RX0 and RX1 pins for a total of 20 days
without sustaining permanent damage. This
high current condition may be the result of
shorted signal lines. The 82527 will not function
properly if the RX0/RX1 input voltage exceeds
V
CC
a
0.5V.
20. Page 12, t
CHDV
decreased from 25 ns to 15 ns.
21. Page 14, t
ELDV
decreased from 25 ns to 15 ns.
22. Page 7, t
AVLL
decreased from 20 ns to 7.5 ns.
23. Page 7, t
WHQX
decreased from 20 ns to 12.5 ns.
This is the -003 revision of the 82527 data sheet.
The following differences exist between the -002
version and the -003 revision.
1. The data sheet has been revised to ADVANCE
from PRELIMINARY, indicating the specifica-
tions have been verified through electrical tests.
2. ABSOLUTE MAXIMUM RATINGS have been
added.
3. V
IL
no longer applies to the AD0–AD7 pins in
CPU Interface mode 3.
4. V
IL1
has been added to specify Input Low Volt-
age for AD0–AD7 pins in CPU Interface mode 3
as
b
0.5V minimum and
a
0.5V maximum.
5. I
CC
supply current has been reduced to 50 mA
from 100 mA.
6. Note 2 was added stating during I
PD
testing, all
pins are driven to V
SS
or V
CC
, including RX0
and RX1.
7. t
AVLL
has been decreased to 20 ns from 33 ns.
8. t
RLDV1
has been decreased to 1.5 t
MCLK
a
100
ns from 2 t
MCLK
a
100 ns for a Read Cycle
without a previous Write (Modes 0, 1).
t
RLDV1
has been decreased to 3.5 t
MCLK
a
100
ns from 4 t
MCLK
a
100 ns for a Read Cycle with
a previous Write (Modes 0, 1).
9. t
CLYV
has added the condition of V
OL
e
1.0V
for a 32 ns delay. t
CLYV
is 40 ns for V
OL
e
0.45
(Modes 0, 1).
10. t
WHYZ
has been decreased to 2 t
MCLK
a
100 ns from 2 t
MCLK
a
145 ns (Modes 0, 1).
11. t
EHDV
has been decreased to 1.5 t
MCLK
a
100 ns from 2 t
MCLK
a
100 ns for a Read Cycle
without a previous Write (Mode 2).
t
EHDV
has been decreased to 3.5 t
MCLK
a
100 ns from 4 t
MCLK
a
100 ns for a Read Cycle
with a previous Write (Mode 2).
12. t
ELEL
has been decreased to 2 t
MCLK
from
2 t
MCLK
a
145 ns (Mode 2).
13. t
CLDV
has been decreased to 55 ns from 65 ns
(Mode 3).
14. t
CHKH
is specified for V
IH
e
2.4V, decreased
from V
IH
e
3.0V. Note 3 has been added which
states an on-chip pullup will drive DSACK0
Y
to
approximately 2.4V. An external pullup is re-
quired to drive this signal to a higher voltage
(Mode 3).
15. t
CHAI
has been increased to 10 ns from 5 ns.
t
CHAI
no longer includes CS
Y
High to R/W
Y
Invalid (Mode 3).
16. t
CHRI
e
5 ns has been added to specify CS
Y
High to R/W
Y
Invalid (Mode 3).
17. t
EHDV
has been decreased to 55 ns from 65 ns
for Reads of the High Speed Registers (Mode
3).
18. t
EHDV
has been decreased to 1.5 t
MCLK
a
100 ns from 2 t
MCLK
a
100 ns for a Read Cycle
without a previous Write (Mode 3).
t
EHDV
has been decreased to 3.5 t
MCLK
a
100 ns from 4 t
MCLK
a
100 ns for a Read Cycle
with a previous Write (Mode 3).
19. The t
AVAL
specification name has been correct-
ed to t
AVAV
(Mode 3).
20. t
CHAI
has been increased to 10 ns from 5 ns
(Mode 3).
21. The input voltage in the A.C. Testing Input Dia-
gram have been revised to V
CC
b
0.5V from
3.0V (high level) and revised to 0.1V from 0.8V
(low level).
20
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