- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄381310 > AS4C4M4F1 (Alliance Semiconductor Corporation) 5V 4M×4 CMOS DRAM （Fast Page Mode)(5V 4M×4 CMOS 動態(tài)RAM（快速頁面模式）) PDF資料下載
參數(shù)資料
| 型號： | AS4C4M4F1 |
| 廠商： | Alliance Semiconductor Corporation |
| 英文描述： | 5V 4M×4 CMOS DRAM （Fast Page Mode)(5V 4M×4 CMOS 動態(tài)RAM（快速頁面模式）) |
| 中文描述： | 5V的4米× 4的CMOS的DRAM（快速頁面模式）（5V的4米× 4的CMOS動態(tài)隨機存儲器（快速頁面模式）） |
| 文件頁數(shù)： | 2/18頁 |
| 文件大?。?/td> | 412K |
| 代理商： | AS4C4M4F1 |
'
$6 & 0 )
$6 & 0 )
$GYDQFH LQIRUPDWLRQ
$//,$1&( 6(0,&21'8&725
','
$ $
)XQFWLRQDOGHVFULSWLRQ
The AS4C4M4F0 and AS4C4M4F1 are high performance 16-megabit CMOS Dynamic Random Access Memory (DRAM) devices organized as
4,194,304 words × 4 bits. The devices are fabricated using advanced CMOS technology and innovative design techniques resulting in high
speed, extremely low power and wide operating margins at component and system levels. The Alliance 16Mb DRAM family is optimized for
use as main memory in PC, workstation, router and switch applications.
These devices feature a high speed page mode operation where read and write operations within a single row (or page) can be executed at
very high speed by toggling column addresses within that row. Row and column addresses are alternately latched into input buffers using the
falling edge of RAS and CAS inputs respectively. Also, RAS is used to make the column address latch transparent, enabling application of
column addresses prior to CAS assertion.
Refresh on the 4096 address combinations of A0 to A11 must be performed every 64 ms using:
RAS-only refresh: RAS is asserted while CAS is held high. Each of the 4096 rows must be strobed. Outputs remain high impedence.
Hidden refresh: CAS is held low while RAS is toggled. Refresh address is generated internally. Outputs remain low impedence with
previous valid data.
CAS-before-RAS refresh (CBR): CAS is asserted prior to RAS. Refresh address is generated internally.
Outputs are high-impedence (OE and WE are don't care).
Normal read or write cycles refresh the row being accessed.
Self-refresh cycles
Refresh on the 2048 address combinations of A0 to A10 must be performed every 32 ms using:
RAS-only refresh: RAS is asserted while CAS is held high. Each of the 2048 rows must be strobed. Outputs remain high impedence.
Hidden refresh: CAS is held low while RAS is toggled. Refresh address is generated internally. Outputs remain low impedence with
previous valid data.
CAS-before-RAS refresh (CBR): CAS is asserted prior to RAS. Refresh address is generated internally.
Outputs are high-impedence (OE and WE are don't care).
Normal read or write cycles refresh the row being accessed.
Self-refresh cycles
The AS4C4M4F0 and AS4C4M4F1 are available in the standard 24/26-pin plastic SOJ and 24/26-pin plastic TSOP packages. The
AS4C4M4F0 and AS4C4M4F1 operate with a single power supply of 5V ± 0.5V and provide TTL compatible inputs and outputs.
/RJLFEORFNGLDJUDPIRU.UHIUHVK
RAS clock
generator
R
c
4096 × 1024 × 4
Array
(16,777,216)
Sense amp
A0
A1
A2
A3
A4
A5
A6
A7
A8
A9
A10
A11
V
CC
GND
A
R
Column decoder
Data
I/O
buffers
OE
RAS
CAS
WE clock
generator
WE
I/O0 to I/O3
CAS clock
generator
相關PDF資料 |
PDF描述 |
|---|---|
| AS4C4M4F1Q | 5V 4M×4 CMOS QuadCAS DRAM （Fast Page Mode)(5V 4M×4 CMOS QuadCAS 動態(tài)RAM（快速頁面模式）) |
| AS4C4M4FOQ | 5V 4M×4 CMOS QuadCAS DRAM （Fast Page Mode)(5V 4M×4 CMOS QuadCAS 動態(tài)RAM（快速頁面模式）) |
| AS4LC1M16E5 | 3V 1M×16 CMOS DRAM (EDO)(3V 1M×16 CMOS動態(tài)RAM（擴展數(shù)據(jù)總線)) |
| AS4LC1M16S1 | 3.3V 1M × 16 CMOS Synchronous DRAM(3.3V 1M × 16 CMOS同步動態(tài)RAM) |
| AS4LC256K16EO | 3.3V 256K×16 CMOS DRAM (EDO)(3.3V 256K×16 CMOS動態(tài)RAM（擴展數(shù)據(jù)總線）) |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| AS4C4M4F1-50 | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:5V 4M×4 CMOS DRAM (Fast Page mode) |
| AS4C4M4F1-50JC | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:5V 4M×4 CMOS DRAM (Fast Page mode) |
| AS4C4M4F1-50JI | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:5V 4M×4 CMOS DRAM (Fast Page mode) |
| AS4C4M4F1-50TC | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:5V 4M×4 CMOS DRAM (Fast Page mode) |
| AS4C4M4F1-50TI | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:5V 4M×4 CMOS DRAM (Fast Page mode) |
發(fā)布緊急采購，3分鐘左右您將得到回復。