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參數(shù)資料
| 型號(hào)： | AS4C256K16FO |
| 廠(chǎng)商： | Alliance Semiconductor Corporation |
| 英文描述： | 5V 256K × 16 CMOS DRAM (Fast Page Mode)(5V 256K × 16 CMOS動(dòng)態(tài)RAM（快速頁(yè)面模式）) |
| 中文描述： | 5V的256K × 16的CMOS的DRAM（快速頁(yè)面模式）（5V的256K × 16的CMOS動(dòng)態(tài)隨機(jī)存儲(chǔ)器（快速頁(yè)面模式）） |
| 文件頁(yè)數(shù)： | 5/25頁(yè) |
| 文件大小： | 521K |
| 代理商： | AS4C256K16FO |
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AS4C256K16FO
2/1/01;
V.0.9
Alliance Semiconductor
P. 5 of 25
Write cycle
(V
CC
= 5V ± 10%, GND = 0V, T
a
= 0
°
C to +70
°
C)
–30
–35
Read-modify-write cycle
(V
CC
= 5V ± 10%, GND = 0V, T
a
= 0
°
C to +70
°
C)
–30
–35
Fast page mode cycle
(V
CC
= 5V ± 10%, GND = 0V, T
a
= 0
°
C to +70
°
C)
–30
–35
Standard
Symbol
Parameter
–25
–50
Unit
Notes
Min
Max
Min
Max
Min
Max
Min
Max
t
ASC
t
CAH
t
AWR
t
WCS
t
WCH
t
WCR
t
WP
t
RWL
t
CWL
t
DS
t
DH
t
DHR
Column address setup time
0
–
0
–
0
–
0
–
ns
Column address hold time
5
–
5
–
5
–
9
–
ns
Column address hold time to RAS
19
–
26
–
28
–
30
–
ns
Write command setup time
0
–
0
–
0
–
0
–
ns
11
Write command hold time
5
–
5
–
5
–
9
–
ns
11
Write command hold time to RAS
19
–
26
–
28
–
30
–
ns
Write command pulse width
5
–
5
–
5
–
9
–
ns
Write command to RAS lead time
7
–
10
–
11
–
12
–
ns
Write command to CAS lead time
5
–
10
–
11
–
12
–
ns
Data-in setup time
0
–
0
–
0
–
0
–
ns
12
Data-in hold time
5
–
5
–
5
–
9
–
ns
12
Data-in hold time to RAS
19
–
26
–
28
–
30
–
ns
Standard
Symbol
Parameter
–25
–50
Unit
Notes
Min
Max
Min
Max
Min
Max
Min
Max
t
RWC
t
RWD
t
CWD
t
AWD
t
RSH(W)
t
CAS(W)
Read-write cycle time
100
–
100
–
105
–
120
–
ns
RAS to WE delay time
34
–
50
–
54
–
60
–
ns
11
CAS to WE delay time
17
–
26
–
28
–
30
–
ns
11
Column address to WE delay time
21
–
32
–
35
–
40
–
ns
11
CAS to RAS hold time (write)
7
–
10
–
10
–
12
–
ns
CAS pulse width (write)
15
–
15
–
15
–
15
–
ns
Standard
Symbol
Parameter
–25
–50
Unit
Notes
Min
Max
Min
Max
Min
Max
Min
Max
t
PC
t
CAP
t
CP
t
PCM
t
CRW
t
RASP
Read or write cycle time
8
–
12
–
14
–
25
–
ns
14
Access time from CAS precharge
–
14
–
19
–
21
–
23
ns
13
CAS precharge time
3
–
3
–
4
–
5
–
ns
Fast page mode RMW cycle
56
–
56
–
58
–
60
–
ns
Page mode CAS pulse width (RMW)
44
–
44
–
46
–
50
–
ns
RAS pulse width
25
75K
30
75K
35
75K
50
75K
ns
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AS4C256K16FO50JC | 制造商: 功能描述: 制造商:undefined 功能描述: |
| AS4C256K16FO-50JC | 制造商:Alliance Memory Inc 功能描述: |
| AS4C256K16FO-50JI | 制造商:ALSC 制造商全稱(chēng):Alliance Semiconductor Corporation 功能描述:5V 256K X 16 CMOS DRAM (Fast Page Mode) |
| AS4C256K16FO-50TC | 制造商:ALSC 制造商全稱(chēng):Alliance Semiconductor Corporation 功能描述:5V 256K X 16 CMOS DRAM (Fast Page Mode) |
| AS4C256K16FO-50TI | 制造商:ALSC 制造商全稱(chēng):Alliance Semiconductor Corporation 功能描述:5V 256K X 16 CMOS DRAM (Fast Page Mode) |
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