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參數(shù)資料
| 型號(hào)： | AS4C256K16FO |
| 廠商： | Alliance Semiconductor Corporation |
| 英文描述： | 5V 256K × 16 CMOS DRAM (Fast Page Mode)(5V 256K × 16 CMOS動(dòng)態(tài)RAM（快速頁面模式）) |
| 中文描述： | 5V的256K × 16的CMOS的DRAM（快速頁面模式）（5V的256K × 16的CMOS動(dòng)態(tài)隨機(jī)存儲(chǔ)器（快速頁面模式）） |
| 文件頁數(shù)： | 3/25頁 |
| 文件大?。?/td> | 521K |
| 代理商： | AS4C256K16FO |
AS4C256K16FO
2/1/01;
V.0.9
Alliance Semiconductor
P. 3 of 25
Absolute maximum ratings
Note: Stresses greater than those listed under
Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions outside those indicated in the operational sections of this specification is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect reliability.
(V
CC
= 5 ± 10%, GND = 0V, T
a
= 0
°
C to +70
°
C)
DC electrical characteristics
Parameter
Symbol
Min
Max
Unit
Input voltage
V
IN
V
OUT
V
CC
T
OPR
T
STG
T
SOLDER
P
D
I
OUT
–1.0
+7.0
V
Output voltage
–1.0
+7.0
V
Power supply voltage
–1.0
+7.0
V
Operating temperature
0
+70
°C
Storage temperature (plastic)
Soldering temperature
×
time
Power dissipation
–55
+150
260
×
10
1
°C
–
°
C
×
sec
W
–
Short circuit output current
–
50
mA
Latch-up current
200
–
mA
Parameter
Input leakage
current
Output leakage
current
Operating
power supply
current
TTL standby
power supply
current
Average power
supply current,
RAS refresh
mode
Fast page mode
average power
supply current
CMOS standby
power supply
current
CAS-before-RAS
refresh power
supply current
Symbol
Test conditions
0V
≤
V
IN
≤
+ 5.5V
pins not under test = 0V
D
OUT
disabled,
0V
≤
V
OUT
≤
+ 5.5V
–25
–30
–35
–50
Unit Note
Min
Max
Min
Max
Min
Max
Min
Max
I
IL
–10
10
–10
10
–10
10
–10
10
μ
A
I
OL
–10
10
–10
10
–10
10
–10
10
μ
A
I
CC1
RAS, UCAS, LCAS, address
cycling; t
RC
= min
–
200
–
180
–
160
–
140
mA
1,2
I
CC2
RAS = UCAS = LCAS = VIH
–
2.0
–
2.0
–
2.0
–
2.0
mA
I
CC3
RAS cycling,
UCAS = LCAS = V
IH
,
t
RC
= min
–
120
–
200
–
190
–
140
mA
1
I
CC4
RAS = UCAS = LCAS = V
IL
,
address cycling: t
SC
= min
–
130
–
190
–
180
–
70
mA
1,2
I
CC5
RAS = UCAS = LCAS =
V
CC
– 0.2V
–
0.60
–
1.0
–
1.0
–
1.0
mA
I
CC6
RAS, UCAS, LCAS, cycling;
t
RC
= min
–
120
–
200
–
190
–
140
mA
1
Output voltage
V
OH
V
OL
I
OUT
= – 5.0 mA
I
OUT
= 4.2 mA
RAS = UCAS = LCAS = V
IL
, WE
= OE = A0 – A8 = V
CC
–0.2V
DQ0 – DQ15 = V
CC
– 0.2V 0.2V
are open
2.4
–
–
2.4
–
–
2.4
–
–
2.4
–
–
V
V
0.4
0.4
0.4
0.4
Self refresh
current
I
CC7
–
2.0
–
2.0
–
2.0
–
2.0
mA
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AS4C256K16FO50JC | 制造商: 功能描述: 制造商:undefined 功能描述: |
| AS4C256K16FO-50JC | 制造商:Alliance Memory Inc 功能描述: |
| AS4C256K16FO-50JI | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:5V 256K X 16 CMOS DRAM (Fast Page Mode) |
| AS4C256K16FO-50TC | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:5V 256K X 16 CMOS DRAM (Fast Page Mode) |
| AS4C256K16FO-50TI | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:5V 256K X 16 CMOS DRAM (Fast Page Mode) |
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