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參數(shù)資料
| 型號： | AS4C256K16E0 |
| 廠商： | Alliance Semiconductor Corporation |
| 英文描述： | 5V 256K×16 CMOS DRAM (EDO)(5V 256K×16 CMOS動態(tài)RAM（擴(kuò)展數(shù)據(jù)總線）) |
| 中文描述： | 5V的256K × 16的CMOS的DRAM（江戶）（5V的256K × 16的CMOS動態(tài)隨機(jī)存儲器（擴(kuò)展數(shù)據(jù)總線）） |
| 文件頁數(shù)： | 4/24頁 |
| 文件大?。?/td> | 643K |
| 代理商： | AS4C256K16E0 |
AS4C256K16E0
Alliance Semiconductor
4 of 24
AC parameters common to all waveforms
Shaded areas contain advance information.
Read cycle
Shaded areas contain advance information.
Std
Symbol
Parameter
-30
-35
-50
Unit
Notes
Min
Max
Min
Max
Min
Max
t
RC
t
RP
t
RAS
t
CAS
t
RCD
t
RAD
t
RSH(R)
t
CSH
t
CRP
t
ASR
t
RAH
t
T
t
REF
t
CLZ
Random read or write cycle time
65
–
70
–
85
–
ns
RAS
precharge time
25
–
25
–
25
–
ns
RAS
pulse width
30
75K
35
75K
50
75K
ns
CAS
pulse width
5
–
6
–
10
–
ns
RAS
to
CAS
delay time
15
20
16
24
15
35
ns
6
RAS
to column address delay time
10
14
11
17
15
25
ns
7
CAS
to
RAS
hold time (read cycle)
10
–
10
–
10
–
ns
RAS
to
CAS
hold time
30
–
35
–
50
–
ns
CAS
to
RAS
precharge time
5
–
5
–
5
–
ns
Row address setup time
0
–
0
–
0
–
ns
Row address hold time
5
–
6
–
9
–
ns
Transition time (rise and fall)
1.5
50
1.5
50
3
50
ns
4,5
Refresh period
–
8
–
8
–
8
ms
3
CAS
to output in low Z
0
–
0
–
3
–
ns
8
Std
Symbol
Parameter
-30
-35
-50
Unit
Notes
Min
Max
Min
Max
Min
Max
t
RAC
t
CAC
t
AA
t
AR(R)
t
RCS
t
RCH
Access time from
RAS
–
30
–
35
–
50
ns
6
Access time from
CAS
–
10
–
10
–
10
ns
6,13
Access time from address
–
16
–
18
–
25
ns
7,13
Column add hold from
RAS
26
–
28
–
30
–
ns
Read command setup time
0
–
0
–
0
–
ns
Read command hold time to
CAS
0
–
0
–
0
–
ns
9
tRRH
t
RAL
t
CPN
t
OFF
Read command hold time to
RAS
0
–
0
–
0
–
ns
9
Column address to
RAS
Lead time
16
–
18
–
25
–
ns
CAS
precharge time
3
–
4
–
5
–
ns
Output buffer turn-off time
0
8
0
8
0
8
ns
8,10
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AS4C256K16FO | 5V 256K × 16 CMOS DRAM (Fast Page Mode)(5V 256K × 16 CMOS動態(tài)RAM（快速頁面模式）) |
| AS4C4M4E1Q | 4M × 4 CMOS QuadCAS DRAM(EDO) Family(4M × 4 CMOS QuadCAS動態(tài)RAM（擴(kuò)展數(shù)據(jù)總線）) |
| AS4C4M4EOQ | 4M × 4 CMOS QuadCAS DRAM(EDO) Family(4M × 4 CMOS QuadCAS動態(tài)RAM（擴(kuò)展數(shù)據(jù)總線）) |
| AS4C4M4F0 | 5V 4M×4 CMOS DRAM （Fast Page Mode)(5V 4M×4 CMOS 動態(tài)RAM（快速頁面模式）) |
| AS4C4M4F1 | 5V 4M×4 CMOS DRAM （Fast Page Mode)(5V 4M×4 CMOS 動態(tài)RAM（快速頁面模式）) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AS4C256K16E0-30 | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:5V 256Kx16 CMOS DRAM (EDO) |
| AS4C256K16E0-30JC | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:5V 256Kx16 CMOS DRAM (EDO) |
| AS4C256K16E0-35 | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:5V 256Kx16 CMOS DRAM (EDO) |
| AS4C256K16E0-35JC | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:5V 256Kx16 CMOS DRAM (EDO) |
| AS4C256K16E0-45JC | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x16 EDO Page Mode DRAM |
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