參數(shù)資料
型號: AS4C1M16E5
廠商: Alliance Semiconductor Corporation
英文描述: 5V 1M×16 CMOS DRAM (EDO)(5V 1M×16 CMOS動態(tài)RAM(擴展數(shù)據(jù)總線))
中文描述: 5V的100萬× 16個CMOS的DRAM(江戶)(5V的100萬× 16個CMOS動態(tài)隨機存儲器(擴展數(shù)據(jù)總線))
文件頁數(shù): 4/22頁
文件大?。?/td> 597K
代理商: AS4C1M16E5
AS4C1M16E5
12/15/00
Alliance Semiconductor
4
DC electrical characteristics
Parameter
Symbol Test conditions
0V
V
in
V
CC
(max)
Pins not under test = 0V
D
OUT
disabled, 0V
V
out
V
CC
(max)
RAS, UCAS, LCAS, Address cycling;
t
RC
=min
RAS = UCAS = LCAS
V
IH
,
all other inputs at V
IH
or V
IL
RAS cycling, UCAS = LCAS
V
IH
,
t
RC
= min of RAS low after XCAS
low.
-45
-50
-60
Unit Notes
Min
Max
Min
Max
Min
Max
Input leakag
e c
urrent
I
IL
-5
+5
-5
+5
-5
+5
μ
A
Output leakage
current
Operating power
supply current
TTL standby power
supply current
Average power supply
current, RAS refresh
mode or CBR
EDO page mode
average power supply
current
CMOS standby power
supply current
I
OL
-5
+5
-5
+5
-5
+5
μ
A
I
CC1
155
145
135
mA
4,5
I
CC2
2.0
2.0
2.0
mA
I
CC3
145
135
125
mA
4
I
CC4
RAS = V
IL
, UCAS or LCAS,
address cycling: t
HPC
= min
130
120
110
mA
4, 5
I
CC5
RAS = UCAS = LCAS = V
CC
- 0.2V,
F = 0
I
OUT
= -5.0 mA
I
OUT
= 4.2 mA
RAS, UCAS or LCAS cycling, t
RC
=
min
1.0
1.0
1.0
mA
Output voltage
V
OH
V
OL
2.4
2.4
2.4
V
V
0.4
0.4
0.4
CAS before RAS
refresh current
I
CC6
155
145
135
mA
相關(guān)PDF資料
PDF描述
AS4C1M16F5 5V 1M×16 CMOS DRAM (Fast-page Mode)(5V 1M×16 CMOS動態(tài)RAM(快速頁面模式))
AS4C256K16E0-50TC 5V 256Kx16 CMOS DRAM (EDO)
AS4C256K16E0-30 5V 256Kx16 CMOS DRAM (EDO)
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