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參數(shù)資料
| 型號(hào)： | AS4C1M16E5 |
| 廠商： | Alliance Semiconductor Corporation |
| 英文描述： | 5V 1M×16 CMOS DRAM (EDO)(5V 1M×16 CMOS動(dòng)態(tài)RAM（擴(kuò)展數(shù)據(jù)總線）) |
| 中文描述： | 5V的100萬× 16個(gè)CMOS的DRAM（江戶）（5V的100萬× 16個(gè)CMOS動(dòng)態(tài)隨機(jī)存儲(chǔ)器（擴(kuò)展數(shù)據(jù)總線）） |
| 文件頁數(shù)： | 3/22頁 |
| 文件大?。?/td> | 597K |
| 代理商： | AS4C1M16E5 |
AS4C1M16E5
12/15/00
Alliance Semiconductor
3
Absolute maximum ratings
Parameter
Input voltage
Input voltage (DQs)
Power supply voltage
Storage temperature (plastic)
Soldering temperature
×
time
Power dissipation
Short circuit output current
Truth table
Symbol
V
in
V
DQ
V
CC
T
STG
T
SOLDER
P
D
I
out
Min
-1.0
-1.0
-1.0
-65
–
–
–
Max
+7.0
V
CC
+ 0.5
+7.0
+150
260
×
10
1
50
Unit
V
V
V
°C
o
C
×
sec
W
mA
Operation
Standby
Word read
Lower byte
read
Upper byte
read
Word
(early) write
Lower byte
(early) write
Upper byte
(early) write
Read write
RAS
H
L
LCAS
H to X
L
UCAS
H to X
L
WE
X
H
OE
X
L
Addresses
t
R
X
ROW
DQ0 to DQ15
High-Z
Data out
Lower byte,
Upper byte, Data out
Lower byte,
Data out, Upper byte
Notes
t
C
X
COL
L
L
H
H
L
ROW
COL
L
H
L
H
L
ROW
COL
L
L
L
L
X
ROW
COL
Data in
L
L
H
L
X
ROW
COL
Lower byte, Data in,
Upper byte, High-Z
Lower byte, High-Z,
Upper byte, Data in
Data out, Data in
Data out
Data out
Data out
Data in
Data in
Data out, Data in
Data out, Data in
L
H
L
L
X
ROW
COL
L
L
L
L
L
L
L
L
L
L
H to L
H
H
H
L
L
H to L
H to L
L to H
L
L
L
X
X
L to H
L to H
ROW
ROW
n/a
n/a
ROW
n/a
ROW
n/a
COL
COL
COL
n/a
COL
COL
COL
COL
1,2
2
2
2
1
1
1,2
1,2
EDO read
1st cycle
2nd cycle
Any cycle
1st cycle
2nd cycle
1st cycle
2nd cycle
H to L
H to L
L to H
H to L
H to L
H to L
H to L
H to L
H to L
L to H
H to L
H to L
H to L
H to L
EDO write
EDO
read write
RAS only
refresh
CBR refresh
Self refresh
L
H
H
X
X
ROW
n/a
High Z
H to L
H to L
L
L
L
L
H
H
X
X
X
X
X
X
High Z
High Z
3
3
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AS4C1M16F5 | 5V 1M×16 CMOS DRAM (Fast-page Mode)(5V 1M×16 CMOS動(dòng)態(tài)RAM（快速頁面模式）) |
| AS4C256K16E0-50TC | 5V 256Kx16 CMOS DRAM (EDO) |
| AS4C256K16E0-30 | 5V 256Kx16 CMOS DRAM (EDO) |
| AS4C256K16E0-30JC | 5V 256Kx16 CMOS DRAM (EDO) |
| AS4C256K16E0-35 | 5V 256Kx16 CMOS DRAM (EDO) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AS4C1M16E5-45JC | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:5V 1M×16 CMOS DRAM (EDO) |
| AS4C1M16E5-45TC | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:5V 1M×16 CMOS DRAM (EDO) |
| AS4C1M16E5-50JC | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:5V 1M×16 CMOS DRAM (EDO) |
| AS4C1M16E5-50JI | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:5V 1M×16 CMOS DRAM (EDO) |
| AS4C1M16E5-50TC | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:DRAM|EDO|1MX16|CMOS|TSOP|50PIN|PLASTIC |
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