參數(shù)資料
型號: APT150GN60LDQ4
廠商: MICROSEMI POWER PRODUCTS GROUP
元件分類: IGBT 晶體管
英文描述: 220 A, 600 V, N-CHANNEL IGBT, TO-264AA
封裝: TO-264, 3 PIN
文件頁數(shù): 7/9頁
文件大?。?/td> 223K
代理商: APT150GN60LDQ4
050-7633
Rev
A
10-2008
0
0.05
0.10
0.15
0.20
0.25
0.30
0.35
10-5
10-4
10-3
10-2
10-1
1.0
Z
θ
JC
,
THERMAL
IMPED
ANCE
(°C/W)
0.5
SINGLE PULSE
0.1
0.3
0.7
0.05
Peak TJ = PDM x ZθJC + TC
Duty Factor D =
t1/t
2
t2
t1
P
DM
Note:
D = 0.9
Characteristic / Test Conditions
Maximum Average Forward Current (T
C
= 103°C, Duty Cycle = 0.5)
RMS Forward Current (Square wave, 50% duty)
Non-Repetitive Forward Surge Current (T
J
= 45°C, 8.3ms)
Symbol
I
F
(AV)
I
F
(RMS)
I
FSM
Symbol
V
F
Characteristic / Test Conditions
I
F
= 120A
Forward Voltage
I
F
= 240A
I
F
= 120A, T
J
= 125°C
STATIC ELECTRICAL CHARACTERISTICS
UNIT
Amps
UNIT
Volts
MIN
TYP
MAX
2.00
2.44
1.70
APT150GN60LDQ4(G)
120
188
600
DYNAMIC CHARACTERISTICS
MAXIMUM RATINGS
All Ratings: T
C
= 25°C unless otherwise specied.
ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE
MIN
TYP
MAX
-
34
-
47.3
-
113
-
4
-
143
-
923
-
11
-
99
-
2631
-
45
UNIT
ns
nC
Amps
ns
nC
Amps
ns
nC
Amps
Characteristic
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Symbol
t
rr
t
rr
Q
rr
I
RRM
t
rr
Q
rr
I
RRM
t
rr
Q
rr
I
RRM
Test Conditions
I
F
= 120A, di
F
/dt = -200A/s
V
R
= 400V, T
C
= 25°C
I
F
= 120A, di
F
/dt = -200A/s
V
R
= 400V, T
C
= 125°C
I
F
= 120A, di
F
/dt = -1000A/s
V
R
= 400V, T
C
= 125°C
I
F
= 1A, di
F
/dt = -100A/s, V
R
= 30V, T
J
= 25°C
RECTANGULAR PULSE DURATION (seconds)
FIGURE 24a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
FIGURE 24b, TRANSIENT THERMAL IMPEDANCE MODEL
Dissipated Power
(Watts)
T
J (°C)
T
C (°C)
Z
EXT are the external thermal
impedances: Case to sink,
sink to ambient, etc. Set to
zero when modeling only
the case to junction.
Z EXT
.1174
.1924
.01168
.13207
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