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參數(shù)資料
| 型號(hào)： | APT15F50KF |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 6.2 A, 500 V, 0.39 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | ROHS COMPLIANT, TO-220, 3 PIN |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 220K |
| 代理商： | APT15F50KF |
N-Channel FREDFET
Absolute Maximum Ratings
Thermal and Mechanical Characteristics
G
D
S
Single die FREDFET
Symbol Parameter
15F50K
15F50KF
Unit
I
D
Continuous Collector Current @ T
C = 25°C
15
6.2
A
Continuous Collector Current @ T
C = 100°C
10
3.9
I
DM
Pulsed Drain Current 1
45
18.6
V
GS
Gate-Source Voltage 2
±30
V
E
AS
Single Pulse Avalanche Energy 2
305
mJ
I
AR
Avalanche Current, Repetitive or Non-Repetitive
7
A
Symbol Parameter
Min
Typ
Max
Unit
P
D
Power Dissipation (T
C = 25°C)
[K]
223
W
Power Dissipation (T
C = 25°C)
[KF]
37
R
θJC
Junction to Case Thermal Resistance [K]
0.56
°C/W
R
θJC
Junction to Case Thermal Resistance [KF]
3.3
R
θCS
Case to Sink Thermal Resistance, Flat, Greased Surface
0.11
T
J,TSTG
Operating and Storage Junction Temperature Range
-55
150
°C
T
L
Soldering Temperature for 10 Seconds (1.6mm from case)
300
W
T
Package Weight
0.07
oz
1.2
g
Torque
Mounting Torque ( TO-220 Package), 4-40 or M3 screw
10
inlbf
1.1
Nm
TYPICAL APPLICATIONS
ZVS phase shifted and other full bridge
Half bridge
PFC and other boost converter
Buck converter
Single and two switch forward
Flyback
FEATURES
Fast switching with low EMI
Low trr for high reliability
Ultra low Crss for improved noise immunity
Low gate charge
Avalanche energy rated
RoHS compliant
APT15F50K
APT15F50K_KF
500V, 15A, 0.39Ω Max, trr ≤190ns
APT15F50KF
Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET.
This 'FREDFET' version has a drain-source (body) diode that has been optimized for
high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft
recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a greatly
reduced ratio of Crss/Ciss result in excellent noise immunity and low switching loss. The
intrinsic gate resistance and capacitance of the poly-silicon gate structure help control
di/dt during switching, resulting in low EMI and reliable paralleling, even when switching
at very high frequency.
Microsemi Website - http://www.microsemi.com
050-8145
Rev
D
12-2009
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