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參數(shù)資料
| 型號： | APT15F50KF |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 6.2 A, 500 V, 0.39 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | ROHS COMPLIANT, TO-220, 3 PIN |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 220K |
| 代理商： | APT15F50KF |
Static Characteristics
TJ = 25°C unless otherwise specied
Dynamic Characteristics
TJ = 25°C unless otherwise specied
Source-Drain Diode Characteristics
1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature.
2 Starting at T
J = 25°C, L = 12.45mH, RG = 25Ω, IAS = 7A.
3 Pulse test: Pulse Width < 380μs, duty cycle < 2%.
4 C
o(cr) is dened as a xed capacitance with the same stored charge as COSS with VDS = 67% of V(BR)DSS.
5 C
o(er) is dened as a xed capacitance with the same stored energy as COSS with VDS = 67% of V(BR)DSS. To calculate Co(er) for any value of
V
DS less than V(BR)DSS, use this equation: Co(er) = -5.22E-8/VDS^2 + 1.21E-8/VDS + 3.48E-11.
6 R
G is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452)
Microsemi reserves the right to change, without notice, the specications and information contained herein.
Unit
V
V/°C
Ω
V
mV/°C
μA
nA
Unit
S
pF
nC
ns
Min
Typ
Max
500
0.60
0.33
0.39
2.5
4
5
-10
250
1000
±100
Min
Typ
Max
11
2250
30
240
140
70
55
13
26
10
12
26
8
Test Conditions
V
GS = 0V, ID = 250μA
Reference to 25°C, I
D = 250μA
V
GS = 10V, ID = 7A
V
GS = VDS, ID = 0.5mA
V
DS = 500V
T
J = 25°C
V
GS = 0V
T
J = 125°C
V
GS = ±30V
Test Conditions
V
DS = 50V, ID = 7A
V
GS = 0V, VDS = 25V
f = 1MHz
V
GS = 0V, VDS = 0V to 333V
V
GS = 0 to 10V, ID = 7A,
V
DS = 250V
Resistive Switching
V
DD = 333V, ID = 7A
R
G = 10Ω
6
, V
GG = 15V
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefcient
Drain-Source On Resistance 3
Gate-Source Threshold Voltage
Threshold Voltage Temperature Coefcient
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Parameter
Forward Transconductance
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance, Charge Related
Effective Output Capacitance, Energy Related
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Current Rise Time
Turn-Off Delay Time
Current Fall Time
Symbol
V
BR(DSS)
V
BR(DSS)/TJ
R
DS(on)
V
GS(th)
V
GS(th)/TJ
I
DSS
I
GSS
Symbol
g
fs
C
iss
C
rss
C
oss
C
o(cr)
4
C
o(er)
5
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
I
S
Continuous Source Current
(Body Diode)
K
MOSFET symbol
showing the
integral reverse p-n
junction diode
(body diode)
15
A
KF
6.2
I
SM
Pulsed Source Current
(Body Diode) 1
K45
KF
18.6
V
SD
Diode Forward Voltage 3
I
SD = 7A, TJ = 25°C, VGS = 0V
1.0
V
t
rr
Reverse Recovery Time
I
SD = 7A
3
V
DD = 100V
di
SD/dt = 100A/μs
T
J = 25°C
190
ns
T
J = 125°C
340
Q
rr
Reverse Recovery Charge
T
J = 25°C
0.54
μC
T
J = 125°C
1.27
I
rrm
Reverse Recovery Current
T
J = 25°C
5.9
A
T
J = 125°C
7.9
dv/dt
Peak Recovery dv/dt
I
SD ≤ 7A, di/dt ≤1000A/μs, VDD = 333V,
T
J = 125°C
20
V/ns
G
D
S
050-8145
Rev
D
12-2009
APT15F50K_KF
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