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參數(shù)資料
| 型號(hào)： | APT15GP60BDQ1G |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 56 A, 600 V, N-CHANNEL IGBT, TO-247AD |
| 封裝： | TO-247, 3 PIN |
| 文件頁數(shù)： | 1/9頁 |
| 文件大小： | 262K |
| 代理商： | APT15GP60BDQ1G |
050-7449
Rev
A
10-2005
TYPICAL PERFORMANCE CURVES
APT15GP60BDQ1
UNIT
Volts
Amps
Watts
°C
The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.
Using Punch Through Technology this IGBT is ideal for many high frequency,
high voltage switching applications and has been optimized for high frequency
switchmode power supplies.
Low Conduction Loss
100 kHz operation @ 400V, 19A
Low Gate Charge
200 kHz operation @ 400V, 12A
Ultrafast Tail Current shutoff
SSOA rated
MAXIMUM RATINGS
All Ratings: TC = 25°C unless otherwise specified.
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
STATIC ELECTRICAL CHARACTERISTICS
MIN
TYP
MAX
600
3
4.5
6
2.2
2.7
2.1
500
3000
±100
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (VGE = 0V, IC = 500A)
Gate Threshold Voltage (VCE = VGE, IC = 1mA, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 15A, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 15A, Tj = 125°C)
Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25°C) 2
Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125°C) 2
Gate-Emitter Leakage Current (VGE = ±20V)
Symbol
V(BR)CES
VGE(TH)
VCE(ON)
ICES
IGES
UNIT
Volts
A
nA
Symbol
VCES
VGE
IC1
IC2
ICM
SSOA
PD
TJ,TSTG
TL
APT15GP60BDQ1
600
±20
56
27
65
65A @ 600V
250
-55 to 150
300
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current @ TC = 25°C
Continuous Collector Current @ TC = 110°C
Pulsed Collector Current 1 @ TC = 150°C
Switching Safe Operating Area @ TJ = 150°C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
TO-247
G
C
E
POWER MOS 7 IGBT
G
C
E
APT15GP60BDQ1
600V
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| APT15GP60BDQ1 | 56 A, 600 V, N-CHANNEL IGBT, TO-247AD |
| APT15GP60BG | 56 A, 600 V, N-CHANNEL IGBT, TO-247AD |
| APT15GP60BSC | 56 A, 600 V, N-CHANNEL IGBT, TO-247 |
| APT15GP60B | 56 A, 600 V, N-CHANNEL IGBT, TO-247AD |
| APT15GP60S | 56 A, 600 V, N-CHANNEL IGBT |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT15GP60BG | 功能描述:IGBT 600V 56A 250W TO247 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> IGBT - 單路 系列:POWER MOS 7® 標(biāo)準(zhǔn)包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發(fā)射極擊穿（最大）:1200V Vge, Ic時(shí)的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標(biāo)準(zhǔn) 安裝類型:通孔 封裝/外殼:TO-247-3 供應(yīng)商設(shè)備封裝:PLUS247?-3 包裝:管件 |
| APT15GP60K | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:POWER MOS 7 IGBT |
| APT15GP60KG | 功能描述:IGBT 600V 56A 250W TO220 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> IGBT - 單路 系列:POWER MOS 7® 標(biāo)準(zhǔn)包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發(fā)射極擊穿（最大）:1200V Vge, Ic時(shí)的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標(biāo)準(zhǔn) 安裝類型:通孔 封裝/外殼:TO-247-3 供應(yīng)商設(shè)備封裝:PLUS247?-3 包裝:管件 |
| APT15GP60S | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:POWER MOS 7 IGBT |
| APT15GP90B | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. |
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