參數(shù)資料
型號： APT150GN60LDQ4
廠商： MICROSEMI POWER PRODUCTS GROUP
元件分類： IGBT 晶體管
英文描述： 220 A, 600 V, N-CHANNEL IGBT, TO-264AA
封裝： TO-264, 3 PIN
文件頁數(shù)： 2/9頁
文件大?。?/td> 223K
代理商： APT150GN60LDQ4
050-7633
Rev
A
10-2008
1 Continuous current limited by case temperature.
2 Repetitive Rating: Pulse width limited by maximum junction temperature.
3 For Combi devices, I
ces includes both IGBT and FRED leakages
4 See MIL-STD-750 Method 3471.
5 E
on1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current
adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in gure 21, but with a Silicon Carbide diode.
6 E
on2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
loss. (See Figures 21, 22.)
7 E
off is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
8 R
G is external gate resistance, not including RG(int) nor gate driver impedance. (MIC4452)
Microsemi Reserves the right to change, without notice, the specications and information contained herein.
Symbol
C
ies
C
oes
C
res
V
GEP
Q
g
Q
ge
Q
gc
SSOA
t
d(on)
t
r
t
d(off)
t
f
E
on1
E
on2
E
off
t
d(on)
t
r
t
d(off)
t
f
E
on1
E
on2
E
off
Test Conditions
Capacitance
V
GE = 0V, VCE = 25V
f = 1 MHz
Gate Charge
V
GE = 15V
V
CE = 300V
I
C = 150A
T
J = 175°C, RG = 4.3Ω
8, V
GE =
15V, L = 100μH,V
CE = 600V
Inductive Switching (25°C)
V
CC = 400V
V
GE = 15V
I
C = 150A
R
G = 1.0Ω
8
T
J = +25°C
Inductive Switching (125°C)
V
CC = 400V
V
GE = 15V
I
C = 150A
R
G = 1.0Ω
8
T
J = +125°C
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate-to-Emitter Plateau Voltage
Total Gate Charge 4
Gate-Emitter Charge
Gate-Collector ("Miller") Charge
Switching Safe Operating Area
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy 5
Turn-on Switching Energy (Diode) 6
Turn-off Switching Energy 7
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy 5 4
Turn-on Switching Energy (Diode) 65
Turn-off Switching Energy 67
MIN
TYP
MAX
9200
350
300
9.5
970
65
510
450
44
110
430
60
8810
8615
4295
44
110
480
95
8880
9735
5460
UNIT
pF
V
nC
A
ns
μJ
ns
μJ
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol
Characteristic / Test Conditions
Min
Typ
Max
Unit
R
θJC
Junction to Case (IGBT)
-
0.28
°C/W
R
θJC
Junction to Case (DIODE)
-
.30
V
Isolation
RMS Voltage (50-60Hz Sinsoidal Waveform from Terminals to Mounting Base for 1 Min.)
2500
W
T
Package Weight
-
6.1
-
gm
APT150GN60LDQ4(G)
Typical Performance Curves
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