參數(shù)資料
型號(hào)： APT150GN60LDQ4
廠商： MICROSEMI POWER PRODUCTS GROUP
元件分類： IGBT 晶體管
英文描述： 220 A, 600 V, N-CHANNEL IGBT, TO-264AA
封裝： TO-264, 3 PIN
文件頁(yè)數(shù)： 1/9頁(yè)
文件大?。?/td> 223K
代理商： APT150GN60LDQ4
050-7633
Rev
A
10-2008
MAXIMUM RATINGS
All Ratings: T
C = 25°C unless otherwise specied.
STATIC ELECTRICAL CHARACTERISTICS
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
GE = 0V, I C = 4mA)
Gate Threshold Voltage (V
CE = VGE, I C = 2400μA, Tj = 25°C)
Collector-Emitter On Voltage (V
GE = 15V, IC = 150A, Tj = 25°C)
Collector-Emitter On Voltage (V
GE = 15V, IC = 150A, Tj = 125°C)
Collector Cut-off Current (V
CE = 600V, VGE = 0V, Tj = 25°C)
3
Collector Cut-off Current (V
CE = 600V, VGE = 0V, Tj = 125°C)
3
Gate-Emitter Leakage Current (V
GE = ±20V)
Intergrated Gate Resistor
Symbol
V
(BR)CES
V
GE(TH)
V
CE(ON)
I
CES
I
GES
R
G(int)
Units
Volts
μA
nA
Ω
Symbol
V
CES
V
GE
I
C1
I
C2
I
CM
SSOA
P
D
T
J,TSTG
T
L
APT150GN60LDQ4(G)
600
±30
220
123
450
450A @ 600V
536
-55 to 175
300
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current @ T
C = 25°C
1
Continuous Collector Current @ T
C = 110°C
Pulsed Collector Current 2
Switching Safe Operating Area @ T
J = 175°C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
UNIT
Volts
Amps
Watts
°C
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra
low VCE(ON) and are ideal for low frequency applications that require absolute minimum
conduction loss. Easy paralleling is a result of very tight parameter distribution and
a slightly positive VCE(ON) temperature coefcient. A built-in gate resistor ensures
extremely reliable operation, even in the event of a short circuit fault. Low gate charge
simplies gate drive design and minimizes losses.
600V Field Stop
Trench Gate: Low VCE(on)
Easy Paralleling
Intergrated Gate Resistor: Low EMI, High Reliability
Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS
MIN
TYP
MAX
600
5.0
5.8
6.5
1.05
1.45
1.85
1.65
75
2000
600
2
600V
APT150GN60LDQ4(G)
Microsemi Website - http://www.microsemi.com
APT150GN60LDQ4(G)
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